公开(公告)号：US10109526B1

公开(公告)日：2018-10-23

申请号：US15609408

申请日：2017-05-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xunyuan Zhang ,  Nicholas V. LiCausi ,  J. Jay McMahon ,  Ryan S. Smith ,  Errol Todd Ryan ,  Shao Beng Law

IPC: H01L21/768

Abstract: Structures for a skip via and methods of forming a skip via in an interconnect structure. A metallization level is formed that includes a dielectric layer with a top surface. An opening is formed that extends vertically from the top surface of the dielectric layer into the dielectric layer. A dielectric cap layer is deposited on a bottom surface of the opening. A fill layer is formed inside the opening and extends from the top surface of the dielectric layer to the dielectric cap layer on the bottom surface of the opening. A via opening is etched that extends vertically through the fill layer to the dielectric cap layer on the bottom surface of the opening.