公开(公告)号：US20230174905A1

公开(公告)日：2023-06-08

申请号：US18104323

申请日：2023-02-01

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Abhudaya Mishra ,  Carl Ballesteros ,  Eric Turner

IPC分类号： C11D7/36 ,  C11D7/34 ,  H01L21/02 ,  C11D7/32 ,  C11D11/00 ,  C11D7/26

CPC分类号： C11D7/36 ,  C11D7/34 ,  H01L21/02057 ,  C11D7/3245 ,  C11D11/0047 ,  C11D7/265

摘要： The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

公开(公告)号：US11499071B2

公开(公告)日：2022-11-15

申请号：US16832739

申请日：2020-03-27

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Alexei P. Leonov ,  Abhudaya Mishra

IPC分类号： C09G1/02 ,  C09K13/02 ,  H01L21/321 ,  C09G1/00 ,  C23F1/10

摘要： The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R1-R7, X, Y, and Z1-Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

公开(公告)号：US11424131B2

公开(公告)日：2022-08-23

申请号：US16929265

申请日：2020-07-15

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Carl Ballesteros ,  Abhudaya Mishra ,  Eric Turner

IPC分类号： C09G1/02 ,  H01L21/3105

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid and a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C16 to C22 hydrocarbon group and the hydrophilic portion comprises at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group. The polishing composition has a pH of about 2 to about 6.5.

公开(公告)号：US10808145B2

公开(公告)日：2020-10-20

申请号：US16535384

申请日：2019-08-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Abhudaya Mishra

IPC分类号： C09G1/02 ,  H01L21/3105 ,  C09K3/14

摘要： Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.

公开(公告)号：US10759970B2

公开(公告)日：2020-09-01

申请号：US16356669

申请日：2019-03-18

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Eric Turner ,  Abhudaya Mishra ,  Carl Ballesteros

IPC分类号： C09G1/02 ,  H01L21/762 ,  H01L21/3105

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C12 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of about 2 to about 6.5.

公开(公告)号：US10428241B2

公开(公告)日：2019-10-01

申请号：US15725855

申请日：2017-10-05

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Abhudaya Mishra

IPC分类号： C09G1/02 ,  H01L21/3105 ,  C09K3/14

摘要： Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.

公开(公告)号：US20230135325A1

公开(公告)日：2023-05-04

申请号：US17970667

申请日：2022-10-21

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Bin Hu ,  Abhudaya Mishra ,  Ting-Kai Huang ,  Yibin Zhang ,  James Johnston ,  James McDonough

IPC分类号： C09G1/02 ,  H01L21/306

摘要： A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210348029A1

公开(公告)日：2021-11-11

申请号：US17332173

申请日：2021-05-27

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Abhudaya Mishra

IPC分类号： C09G1/02 ,  H01L21/3105 ,  C09K3/14

摘要： Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.

公开(公告)号：US20210292685A1

公开(公告)日：2021-09-23

申请号：US17204983

申请日：2021-03-18

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Abhudaya Mishra ,  Carl Ballesteros ,  Eric Turner

IPC分类号： C11D7/36 ,  C11D7/34 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02

摘要： The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

公开(公告)号：US20200339837A1

公开(公告)日：2020-10-29

申请号：US16928169

申请日：2020-07-14

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Eric Turner ,  Abhudaya Mishra ,  Carl Ballesteros

IPC分类号： C09G1/02 ,  H01L21/3105 ,  H01L21/762

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid, a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C16 to C22 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group. The polishing composition can have a pH of about 2 to about 6.5.