公开(公告)号：US20120037883A1

公开(公告)日：2012-02-16

申请号：US13059388

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

发明人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

IPC分类号： H01L33/04

CPC分类号： H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).

摘要翻译： 发光器件包括导电衬底（320），位于导电衬底上方的包括n型掺杂半导体层（308）的多层半导体结构，位于n型掺杂半导体层之上的p型掺杂半导体层（312） 掺杂半导体层（308）和位于p型和n型掺杂半导体层（308,312）之间的MQW有源层（310）。 多层半导体结构被凹槽（300）划分以形成多个独立的发光台面（304,306）。 至少一个发光台面（304,306）包括颜色转换层（324,326）。

公开(公告)号：US08044416B2

公开(公告)日：2011-10-25

申请号：US12093549

申请日：2008-03-25

申请人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

发明人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

IPC分类号： H01L33/30

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

摘要： One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.

摘要翻译： 本发明的一个实施例提供一种制造大功率发光二极管（LED）的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构，其中相应的台面支撑单独的LED结构。 此外，该方法包括将多层结构粘合到导电基底上。 该方法还包括去除生长底物。 此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。 此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

公开(公告)号：US07741632B2

公开(公告)日：2010-06-22

申请号：US11778213

申请日：2007-07-16

申请人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Yingwen Tang ,  Changda Zheng ,  Junlin Liu ,  Weihua Liu ,  Guping Wang

发明人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Yingwen Tang ,  Changda Zheng ,  Junlin Liu ,  Weihua Liu ,  Guping Wang

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L33/0079 ,  H01L33/32

摘要： One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.

摘要翻译： 本发明的一个实施例提供了一种InGaAlN基半导体发光器件，其包括基于InGaAlN的半导体多层结构和支持InGaAlN基半导体多层结构的碳基衬底，其中所述碳基衬底包括至少一个 碳基层。 该碳基基板具有高导热性和低电阻率。

公开(公告)号：US20080265265A1

公开(公告)日：2008-10-30

申请号：US11778213

申请日：2007-07-16

申请人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Yingwen Tang ,  Changda Zheng ,  Junlin Liu ,  Weihua Liu ,  Guping Wang

发明人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Yingwen Tang ,  Changda Zheng ,  Junlin Liu ,  Weihua Liu ,  Guping Wang

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L33/0079 ,  H01L33/32

摘要： One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.

摘要翻译： 本发明的一个实施例提供了一种InGaAlN基半导体发光器件，其包括基于InGaAlN的半导体多层结构和支持InGaAlN基半导体多层结构的碳基衬底，其中所述碳基衬底包括至少一个 碳基层。 该碳基基板具有高导热性和低电阻率。

公开(公告)号：US08354665B2

公开(公告)日：2013-01-15

申请号：US13059388

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

发明人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

IPC分类号： H01L33/04

CPC分类号： H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).

摘要翻译： 发光器件包括导电衬底（320），位于导电衬底上方的包括n型掺杂半导体层（308）的多层半导体结构，位于n型掺杂半导体层之上的p型掺杂半导体层（312） 掺杂半导体层（308）和位于p型和n型掺杂半导体层（308,312）之间的MQW有源层（310）。 多层半导体结构被凹槽（300）划分以形成多个独立的发光台面（304,306）。 至少一个发光台面（304,306）包括颜色转换层（324,326）。

公开(公告)号：US20100176404A1

公开(公告)日：2010-07-15

申请号：US12093549

申请日：2008-03-25

申请人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

发明人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

IPC分类号： H01L33/30

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

摘要： One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.

摘要翻译： 本发明的一个实施例提供一种制造大功率发光二极管（LED）的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构，其中相应的台面支撑单独的LED结构。 此外，该方法包括将多层结构粘合到导电基底上。 该方法还包括去除生长底物。 此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。 此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

公开(公告)号：US20110133159A1

公开(公告)日：2011-06-09

申请号：US13059400

申请日：2008-08-19

申请人： Fengyi Jiang ,  Yingwen Tang ,  Chunlan Mo ,  Li Wang

发明人： Fengyi Jiang ,  Yingwen Tang ,  Chunlan Mo ,  Li Wang

IPC分类号： H01L33/06 ,  H01L33/44

CPC分类号： H01L33/145 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.

摘要翻译： 半导体发光器件包括衬底，第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱（MQW）有源层 。 该器件还包括耦合到第一掺杂半导体层的第一电极，其中部分第一掺杂半导体层被钝化，并且其中第一掺杂半导体层的钝化部分使第一电极与第一掺杂半导体层的边缘基本绝缘 层，从而减少表面复合。 该器件还包括耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层，MQW有源层和第二掺杂半导体层的水平表面的一部分的侧壁的钝化层， 不被第二电极覆盖。

公开(公告)号：US07977663B2

公开(公告)日：2011-07-12

申请号：US12160040

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/04

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.

摘要翻译： 半导体发光器件包括在导电衬底上的多层半导体结构。 多层半导体结构包括位于导电衬底之上的第一掺杂半导体层，位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。 该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层，其包括Ag和Ni，Ru，Rh，Pd，Au，Os，Ir和Pt中的至少一种; 加上Zn，Mg Be和Cd中的至少一种; 和多个：W，Cu，Fe，Ti，Ta和Cr。 该器件还包括在反射欧姆接触金属层和导电基底之间的结合层，耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

公开(公告)号：US20100207096A1

公开(公告)日：2010-08-19

申请号：US12093512

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/32 ,  H01L33/04

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

摘要翻译： 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。

公开(公告)号：US07829359B2

公开(公告)日：2010-11-09

申请号：US12093512

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

摘要翻译： 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。