Invention Grant
US07741632B2 InGaAIN light-emitting device containing carbon-based substrate and method for making the same
有权
含有碳基基板的InGaAIN发光元件及其制造方法
- Patent Title: InGaAIN light-emitting device containing carbon-based substrate and method for making the same
- Patent Title (中): 含有碳基基板的InGaAIN发光元件及其制造方法
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Application No.: US11778213Application Date: 2007-07-16
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Publication No.: US07741632B2Publication Date: 2010-06-22
- Inventor: Chuanbing Xiong , Fengyi Jiang , Li Wang , Yingwen Tang , Changda Zheng , Junlin Liu , Weihua Liu , Guping Wang
- Applicant: Chuanbing Xiong , Fengyi Jiang , Li Wang , Yingwen Tang , Changda Zheng , Junlin Liu , Weihua Liu , Guping Wang
- Applicant Address: CN Nanchang
- Assignee: Lattice Power (Jiangxi) Corporation
- Current Assignee: Lattice Power (Jiangxi) Corporation
- Current Assignee Address: CN Nanchang
- Agency: Park, Vaughan & Fleming LLP
- Priority: CN200710107760 20070429
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.
Public/Granted literature
- US20080265265A1 InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME Public/Granted day:2008-10-30
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