-
公开(公告)号：US09390781B2
公开(公告)日：2016-07-12
申请号：US14464952
申请日：2014-08-21
发明人： Osamu Matsuura
IPC分类号： H01L21/02 , G11C11/22 , H01L29/51 , H01L27/115
CPC分类号： G11C11/221 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L29/516 , H01L2924/1441
摘要： A semiconductor device includes a transistor formed on a semiconductor substrate, a first insulation film formed above the semiconductor substrate, and first and second capacitors located on the first insulation film. The first capacitor includes a lower electrode, a ferroelectric, and an upper electrode. One of the lower electrode and the upper electrode is connected to an impurity region of the transistor. The second capacitor includes a first electrode, a first dielectric, a second electrode, a second dielectric, and a third electrode. The lower electrode is formed from the same material as the first electrode, the ferroelectric is formed from the same material as the first dielectric, and the upper electrode is formed from the same material as the second electrode.
摘要翻译： 半导体器件包括形成在半导体衬底上的晶体管，形成在半导体衬底上的第一绝缘膜，以及位于第一绝缘膜上的第一和第二电容器。 第一电容器包括下电极，铁电体和上电极。 下电极和上电极中的一个连接到晶体管的杂质区。 第二电容器包括第一电极，第一电介质，第二电极，第二电介质和第三电极。 下电极由与第一电极相同的材料形成，铁电体由与第一电介质相同的材料形成，并且上电极由与第二电极相同的材料形成。
-
公开(公告)号：US20150060969A1
公开(公告)日：2015-03-05
申请号：US14464952
申请日：2014-08-21
发明人： Osamu Matsuura
CPC分类号： G11C11/221 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L29/516 , H01L2924/1441
摘要： A semiconductor device includes a transistor formed on a semiconductor substrate, a first insulation film formed above the semiconductor substrate, and first and second capacitors located on the first insulation film. The first capacitor includes a lower electrode, a ferroelectric, and an upper electrode. One of the lower electrode and the upper electrode is connected to an impurity region of the transistor. The second capacitor includes a first electrode, a first dielectric, a second electrode, a second dielectric, and a third electrode. The lower electrode is formed from the same material as the first electrode, the ferroelectric is formed from the same material as the first dielectric, and the upper electrode is formed from the same material as the second electrode.
摘要翻译： 半导体器件包括形成在半导体衬底上的晶体管，形成在半导体衬底上的第一绝缘膜，以及位于第一绝缘膜上的第一和第二电容器。 第一电容器包括下电极，铁电体和上电极。 下电极和上电极中的一个连接到晶体管的杂质区。 第二电容器包括第一电极，第一电介质，第二电极，第二电介质和第三电极。 下电极由与第一电极相同的材料形成，铁电体由与第一电介质相同的材料形成，并且上电极由与第二电极相同的材料形成。
-
搜索结果
2 条记录 (耗时 0.012 秒)
