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公开(公告)号：US11978627B2
公开(公告)日：2024-05-07
申请号：US17359759
申请日：2021-06-28
发明人： Juiping Li , Bohsiang Tseng , Jiahao Zhang , Mingxin Chen , Binbin Li , Yao Huo
CPC分类号： H01L21/02428 , C30B25/186 , H01L33/007 , H01L33/06
摘要： A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.
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公开(公告)号：US12012669B2
公开(公告)日：2024-06-18
申请号：US16941095
申请日：2020-07-28
发明人： Mingxin Chen , Xuewu Wang
CPC分类号： C30B29/30 , C30B33/02 , H01L21/02664 , H03H9/14502
摘要： A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.
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