公开(公告)号：US20040200951A1

公开(公告)日：2004-10-14

申请号：US10816853

申请日：2004-04-05

申请人： FUJI XEROX CO., LTD. ,  MACNICA, INC. ,  K-TECH DEVICES CORPORATION

发明人： Shigeru Yagi ,  Seiji Suzuki ,  Takashi Kurita ,  Shizuo Yamamoto

IPC分类号： H01L031/00 ,  H01J040/14

CPC分类号： H01L31/0203 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light detection device which can be stably surface-mounted on, for example, a circuit board or the like, and a mounting method thereof are provided. A light-receiving element includes, a transparent conductive electrode (first electrode), a semiconductor layer, and an electrode (first electrode), which are sequentially laminated on a transparent substrate. An insulative substrate includes a terminal electrode (second electrode) which is provided to be exposed at first and second faces of the insulative substrate. The light-receiving element is disposed at the first face of the insulative substrate, and the transparent conductive electrode and the electrode are electrically connected with the terminal electrode exposed at the first face of the insulative substrate. Hence, the light detection device with this structure is surface-mounted on the circuit board such that the terminal electrode exposed at the second face of the insulative substrate connects with an external terminal of the circuit board.

摘要翻译： 提供了可以稳定地表面安装在例如电路板等上的光检测装置及其安装方法。 光接收元件包括依次层压在透明基板上的透明导电电极（第一电极），半导体层和电极（第一电极）。 绝缘性基板包括设置为在绝缘基板的第一面和第二面露出的端子电极（第二电极）。 光接收元件设置在绝缘基板的第一面上，透明导电电极和电极与在绝缘基板的第一面露出的端子电极电连接。 因此，具有这种结构的光检测装置表面安装在电路板上，使得在绝缘基板的第二面露出的端子电极与电路板的外部端子连接。

公开(公告)号：US20030160264A1

公开(公告)日：2003-08-28

申请号：US10217036

申请日：2002-08-13

申请人： FUJI XEROX CO., LTD.

发明人： Shigeru Yagi ,  Seiji Suzuki

IPC分类号： H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109

CPC分类号： H01L29/66219 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/861

摘要： A hetero-junction semiconductor device is used as a diode in which a compound semiconductor layer at least contains one or more elements selected from group IIIA elements and one or more elements selected from group VA elements. The compound semiconductor layer is laminated on a surface of a heterogeneous semiconductor having a different conduction type from that of the compound semiconductor.

摘要翻译： 异质结半导体器件用作二极管，其中化合物半导体层至少包含选自IIIA族元素的一种或多种元素和选自组VA元素的一种或多种元素。 化合物半导体层层压在具有与化合物半导体不同的导电类型的非均相半导体的表面上。