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公开(公告)号：US08759134B2
公开(公告)日：2014-06-24
申请号：US14163681
申请日：2014-01-24
CPC分类号： H01L21/0254 , C30B25/183 , C30B29/406 , H01L21/02376 , H01L21/02381 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0262 , H01L21/76838 , H01L21/78 , H01L23/3732 , H01L24/32 , H01L29/1602 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
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2.发明申请公开(公告)号：US20140141595A1
公开(公告)日：2014-05-22
申请号：US14163681
申请日：2014-01-24
IPC分类号： H01L21/02 , H01L21/768 , H01L21/78
CPC分类号： H01L21/0254 , C30B25/183 , C30B29/406 , H01L21/02376 , H01L21/02381 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0262 , H01L21/76838 , H01L21/78 , H01L23/3732 , H01L24/32 , H01L29/1602 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
摘要翻译： 公开了用于集成宽间隙半导体，特别是用合成金刚石衬底的氮化镓外延层的方法。 金刚石基底通过将合成金刚石沉积到沉积或形成在包含由氮化镓制成的至少一层的分层结构上的成核层而产生。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。
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3.发明申请SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE AND METHODS OF MANUFACTUIRNG THE SAME 审中-公开具有改进的可靠性和操作寿命的半导体器件及其制造方法公开(公告)号：US20150279945A1
公开(公告)日：2015-10-01
申请号：US14432721
申请日：2013-10-25
申请人： Daniel FRANCIS , Dubravko BABIC , Firooz NASSER-FAILI , Felix EJECKAM , Quentin DIDUCK , Joseph SMART , Kristopher MATTHEWS , Frank LOWE , ELEMENT SIX TECHNOLOGIES US CORPORATION
发明人： Daniel Francis , Dubravko Babic , Firooz Nasser-Faili , Felix Ejeckham , Quentin Diduck , Joseph Smart , Kristopher Matthews , Frank Lowe
CPC分类号： H01L29/32 , H01L21/02527 , H01L21/0262 , H01L21/6835 , H01L21/76254 , H01L29/04 , H01L29/1602 , H01L29/2003 , H01L2221/68318 , H01L2221/6834 , H01L2221/68372
摘要： Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time. The methods as described herein can be used to fabricate working semiconductor wafer structures which have a low concentration of dislocation defects throughout the active semiconductor layer structure and which do not comprise highly dislocated strain-matching layers which are present in the native semiconductor growth substrate
摘要翻译： 描述了制造半导体晶片结构的方法，其具有改善的寿命和可靠性。 所述方法包括将有源半导体层结构从天然非晶格匹配半导体生长衬底转移到工作衬底，其中应变匹配层以及可选地一部分有源半导体层结构被去除。 在某些实施例中，将有源半导体层结构附着到工作衬底的工艺包括在高温下退火一段特定的时间。 本文所述的方法可用于制造在整个有源半导体层结构中具有低浓度位错缺陷并且不包含存在于天然半导体生长衬底中的高位错应变匹配层的工作半导体晶片结构
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