公开(公告)号：US20140167175A1

公开(公告)日：2014-06-19

申请号：US13914713

申请日：2013-06-11

Applicant: Electronics and Telecommunications Research Institute

Inventor： Seong-Il KIM ,  Jong-Won Lim ,  Dong Min Kang ,  Sang-Heung Lee ,  Hyung Sup Yoon ,  Chull Won Ju ,  Byoung-Gue Min ,  Jongmin Lee ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L27/088 ,  H01L29/66

CPC classification number: H01L29/66477 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/401 ,  H01L29/402 ,  H01L29/41 ,  H01L29/42312 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/812

Abstract: A field effect transistor is provided. The transistor may include a source electrode and a drain electrode provided spaced apart from each other on a substrate and a ‘+’-shaped gate electrode provided on a portion of the substrate located between the source and drain electrodes.

Abstract translation: 提供场效应晶体管。 晶体管可以包括在基板上彼此间隔开设置的源电极和漏电极，以及设置在位于源极和漏极之间的基板的一部分上的“+”形栅电极。