AVALANCHE PHOTODIODE
    2.
    发明申请
    AVALANCHE PHOTODIODE 审中-公开
    AVALANCHE光电

    公开(公告)号:US20140175511A1

    公开(公告)日:2014-06-26

    申请号:US13950454

    申请日:2013-07-25

    CPC classification number: H01L31/1075

    Abstract: An avalanche photodiode according to the inventive concept includes a substrate, light absorption layers on the substrate, clad layers on the light absorption layers, and active regions in the clad layers. The light absorption layers, the clad layers, and the active regions constitute unit cells. Each of the unit cells has a fan-shape.

    Abstract translation: 根据本发明构思的雪崩光电二极管包括衬底,衬底上的光吸收层,光吸收层上的包覆层以及包层中的有源区。 光吸收层,包层和有源区构成单元。 每个单电池都有扇形。

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