公开(公告)号：US20220285244A1

公开(公告)日：2022-09-08

申请号：US17562587

申请日：2021-12-27

Applicant: Electronics and Telecommunications Research Institute

Inventor： Il Gyu CHOI ,  Seong Il KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  Hyun Wook JUNG

IPC: H01L23/373

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.