摘要:
An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要:
An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要:
An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要翻译:公开了一种图像传感器,其具有像素阵列部分,其中以垂直和水平方向上的二维方式排列像素,并且控制滚动快门方法中的每个像素的曝光时间。 该传感器包括控制装置,用于通过基于地址添加量的操作,确定在一个水平扫描周期内的电子快门发生数,其是电子快门在一个水平扫描周期中同时执行的行数。 当像素阵列的垂直地址移动量为1时,P 1,P 2,P 3,...,P N 3 N 在每个像素中对应于电荷读取执行的用于调节曝光的电子快门的曝光调节快门中的每一个水平扫描周期的部分表示为地址添加量的重复(P < ,P 3,P 3,N 3,...,P N N)。
摘要:
An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要:
An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要:
There is provided a solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
摘要:
A solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
摘要:
There is provided a solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
摘要:
A solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
摘要:
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.