公开(公告)号：US20180119888A1

公开(公告)日：2018-05-03

申请号：US15573020

申请日：2016-05-11

申请人： ENTEGRIS, INC.

发明人： Daneil ELZER ,  Ying TANG ,  Barry Lewis CHAMBERS ,  Joseph D. SWEENEY ,  Shaun M. WILSON ,  Steven ULANECKI ,  Steven E. BISHOP ,  James V. MCMANUS ,  Karl W. OLANDER ,  Edward E. JONES ,  Oleg BYL ,  Joseph R. DESPRES ,  Christopher SCANNELL

IPC分类号： F17C13/04

CPC分类号： F17C13/04 ,  F17C11/00 ,  F17C2201/0114 ,  F17C2201/0119 ,  F17C2201/058 ,  F17C2203/0617 ,  F17C2205/0308 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0385 ,  F17C2205/0391

摘要： Fluid dispensing assemblies are disclosed, for use in fluid supply packages in which such fluid dispensing assemblies as coupled to fluid supply vessels, for dispensing of fluids such as semiconductor manufacturing fluids. The fluid dispensing assemblies in specific implementations are configured to prevent application of excessive force to valve elements in the fluid dispensing assemblies, and/or for avoiding inadvertent or accidental open conditions of vessels that may result in leakage of toxic or otherwise hazardous or valuable gas. Also described are alignment devices for assisting coupling of coupling elements, e.g., coupling elements of fluid supply packages of the foregoing type, so that damage to such couplings as a result of misalignment is avoided.

公开(公告)号：US20220108863A1

公开(公告)日：2022-04-07

申请号：US17492089

申请日：2021-10-01

申请人： Entegris, Inc.

发明人： Ying TANG ,  Joe R. DESPRES ,  Joseph D. SWEENEY ,  Oleg BYL ,  Barry Lewis CHAMBERS

IPC分类号： H01J37/08 ,  H01J37/32

摘要： Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

公开(公告)号：US20210189550A1

公开(公告)日：2021-06-24

申请号：US17055885

申请日：2019-03-15

申请人： ENTEGRIS, INC.

发明人： Oleg BYL ,  Ying TANG ,  Joseph R. DESPRES ,  Joseph SWEENEY ,  Sharad N. YEDAVE

IPC分类号： C23C14/48 ,  H01J37/317 ,  C23C14/56 ,  H01J37/08

摘要： The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) N of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.

公开(公告)号：US20220112986A1

公开(公告)日：2022-04-14

申请号：US17495363

申请日：2021-10-06

申请人： Entegris, Inc.

发明人： Oleg BYL

IPC分类号： F17C11/00 ,  B01J20/22 ,  B01J20/28

摘要： Described are storage and dispensing systems and related methods, for the selective dispensing germane (GeH4) as a reagent gas from a vessel in which the germane is held in sorptive relationship to a solid adsorbent medium that includes a zeolitic imidazolate framework.

公开(公告)号：US20210020402A1

公开(公告)日：2021-01-21

申请号：US16904286

申请日：2020-06-17

申请人： ENTEGRIS, INC.

发明人： Ying TANG ,  Sharad N. YEDAVE ,  Joseph R. DESPRES ,  Joseph D. SWEENEY ,  Oleg BYL

IPC分类号： H01J37/317 ,  H01J37/08

摘要： A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20210398773A1

公开(公告)日：2021-12-23

申请号：US17466362

申请日：2021-09-03

申请人： Entegris, Inc.

发明人： Ying TANG ,  Sharad N. YEDAVE ,  Joseph R. DESPRES ,  Joseph D. SWEENEY ,  Oleg BYL

IPC分类号： H01J37/317 ,  H01J37/08

摘要： A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20200051819A1

公开(公告)日：2020-02-13

申请号：US16659004

申请日：2019-10-21

申请人： ENTEGRIS, INC.

发明人： Joseph D. SWEENEY ,  Oleg BYL ,  Robert KAIM

IPC分类号： H01L21/265 ,  H01J37/317 ,  C23C14/48 ,  C23C14/06 ,  H01L21/223

摘要： A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CwFxOyHz wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.

公开(公告)号：US20210090860A1

公开(公告)日：2021-03-25

申请号：US17024261

申请日：2020-09-17

申请人： ENTEGRIS, INC.

发明人： Ying TANG ,  Bryan C. HENDRIX ,  Oleg BYL ,  Sharad N. YEDAVE

IPC分类号： H01J37/32

摘要： Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

公开(公告)号：US20200248873A1

公开(公告)日：2020-08-06

申请号：US16855684

申请日：2020-04-22

申请人： ENTEGRIS, INC.

发明人： Daniel ELZER ,  Ying TANG ,  Barry L. CHAMBERS ,  Joseph D. SWEENEY ,  Shaun M. WILSON ,  Steven E. BISHOP ,  Steven ULANECKI ,  James V. MCMANUS ,  Oleg BYL ,  Christopher SCANNELL ,  Edward E. JONES ,  Joseph R. DESPRES

IPC分类号： F17C13/04 ,  F17C11/00

摘要： Fluid dispensing assemblies are disclosed, for use in fluid supply packages in which such fluid dispensing assemblies as coupled to fluid supply vessels, for dispensing of fluids such as semiconductor manufacturing fluids. The fluid dispensing assemblies in specific implementations are configured to prevent application of excessive force to valve elements in the fluid dispensing assemblies, and/or for avoiding inadvertent or accidental open conditions of vessels that may result in leakage of toxic or otherwise hazardous or valuable gas. Also described are alignment devices for assisting coupling of coupling elements, e.g., coupling elements of fluid supply packages of the foregoing type, so that damage to such couplings as a result of misalignment is avoided.

公开(公告)号：US20200083015A1

公开(公告)日：2020-03-12

申请号：US16564965

申请日：2019-09-09

申请人： ENTEGRIS, INC.

发明人： Joseph D. SWEENEY ,  Joseph R. DESPRES ,  Ying TANG ,  Sharad N. YEDAVE ,  Edward E. JONES ,  Oleg BYL

IPC分类号： H01J37/08 ,  H01J37/317

摘要： An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.