公开(公告)号：US20240356303A1

公开(公告)日：2024-10-24

申请号：US18638137

申请日：2024-04-17

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Seungchul LEE ,  Namje KIM ,  O-Kyun KWON ,  Miran PARK

IPC: H01S5/026 ,  H01S5/343

CPC classification number: H01S5/026 ,  H01S5/34313

Abstract: Disclosed are a photonic integrated circuit device and a fabrication method thereof, wherein the fabrication method includes forming an active layer on a substrate having a passive waveguide region, an LD region, and an EAM region, forming a grating layer, forming a first upper clad layer, forming a passivation layer, forming a mask pattern, forming a vacancy generation layer, performing a rapid thermal process to provide a first vacancy activation region in the active layer, removing the vacancy generation layer, the mask pattern, and the passivation layer, forming a second upper clad layer, and forming electrodes.

公开(公告)号：US20230227960A1

公开(公告)日：2023-07-20

申请号：US17968126

申请日：2022-10-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： O-Kyun KWON ,  Namje KIM ,  Ho Sung KIM ,  Miran PARK ,  SEUNGCHUL LEE ,  Won Seok HAN

IPC: C23C14/04 ,  G02B6/132

CPC classification number: C23C14/042 ,  G02B6/132 ,  G02B2006/12173

Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.

公开(公告)号：US20240313503A1

公开(公告)日：2024-09-19

申请号：US18606448

申请日：2024-03-15

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Namje KIM ,  O-Kyun KWON ,  Ho Sung KIM ,  Miran PARK ,  Seungchul LEE

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/12

CPC classification number: H01S5/0265 ,  H01S5/04256 ,  H01S5/12

Abstract: Provided is an electro-absorption modulated lasers with identical-active layer. The lasers include a substrate having a passive waveguide region, an LD region on one side of the passive waveguide region, and an EAM region on the other side of the passive waveguide region, an active layer provided on the substrate and extending from the LD region to the EAM region, a grating layer provided on the active layer, a clad layer provided on the grating layer, and electrodes provided in the LD region and the EAM region of the clad layer.

公开(公告)号：US20190165863A1

公开(公告)日：2019-05-30

申请号：US15855825

申请日：2017-12-27

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： O-Kyun KWON ,  Namje KIM ,  Miran PARK ,  Shinmo AN ,  Won Seok HAN

IPC: H04B10/54 ,  H04B10/2575

Abstract: An optical signal generating apparatus according to an embodiment of the inventive concept includes a first optical intensity modulator for modulating a first optical signal to generate a 2N-level (where N is a positive integer) second optical signal in the form of a binary signal, a first optical amplifier for amplifying the second optical signal to generate a third optical signal, and a second optical intensity modulator for modulating the third optical signal to generate a 2N+1-level fourth optical signal in the form of a binary signal. The optical signal generating apparatus according to an embodiment of the inventive concept may generate a low-cost, high-quality optical signal by using an optical device to generate a multi-level optical signal. Additionally, the optical signal generating apparatus according to an embodiment of the inventive concept may generate a multi-level optical signal by sequentially performing optical modulation and optical amplification operations.

公开(公告)号：US20200212653A1

公开(公告)日：2020-07-02

申请号：US16539665

申请日：2019-08-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： O-Kyun KWON ,  namje KIM ,  Miran PARK ,  Tae-Soo KIM ,  Shinmo AN ,  Won Seok HAN

IPC: H01S5/125 ,  H01S5/34 ,  H01S5/065

Abstract: Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.

公开(公告)号：US20200212652A1

公开(公告)日：2020-07-02

申请号：US16561420

申请日：2019-09-05

Applicant: Electronics and Telecommunications Research Institute

Inventor： Namje KIM ,  O-Kyun KWON ,  Miran PARK ,  Tae-Soo KIM ,  Shinmo AN ,  Won Seok HAN

IPC: H01S5/12 ,  H01S5/028 ,  H01S5/026 ,  H01S5/042 ,  H01S5/024

Abstract: Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.