公开(公告)号：US20190131201A1

公开(公告)日：2019-05-02

申请号：US16175284

申请日：2018-10-30

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sun Jin YUN ,  Junjae YANG ,  Changbong YEON ,  JungWook LIM

IPC: H01L23/31 ,  H01L21/02 ,  H01L29/24 ,  H01L29/16 ,  H01L23/29

Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.