公开(公告)号：US20120126340A1

公开(公告)日：2012-05-24

申请号：US12949272

申请日：2010-11-18

Applicant: Donald R. DISNEY

Inventor： Donald R. DISNEY

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/7833 ,  H01L21/2652 ,  H01L29/1083 ,  H01L29/6659

Abstract: An MOS transistor includes a doping profile that selectively increases the dopant concentration of the body region. The doping profile has a shallow portion that increases the dopant concentration of the body region just under the surface of the transistor under the gate, and a deep portion that increases the dopant concentration of the body region under the source and drain regions. The doping profile may be formed by implanting dopants through the gate, source region, and drain region. The dopants may be implanted in a high energy ion implant step through openings of a mask that is also used to perform another implant step. The dopants may also be implanted through openings of a dedicated mask.

Abstract translation: MOS晶体管包括选择性地增加身体区域的掺杂剂浓度的掺杂分布。 掺杂分布具有浅部分，其增加正好在栅极下的晶体管的表面下方的体区的掺杂剂浓度，以及增加源极和漏极区下的体区的掺杂剂浓度的深部。 可以通过在栅极，源极区和漏极区注入掺杂剂来形成掺杂分布。 掺杂剂可以通过掩模的开口在高能离子注入步骤中植入，掩模的开口也用于执行另一个注入步骤。 掺杂剂也可以通过专用掩模的开口植入。

公开(公告)号：US20120007567A1

公开(公告)日：2012-01-12

申请号：US12956351

申请日：2010-11-30

Applicant: Donald R. DISNEY ,  Michael HSING ,  James NGUYEN ,  James MOYER

Inventor： Donald R. DISNEY ,  Michael HSING ,  James NGUYEN ,  James MOYER

IPC: H02J7/00

CPC classification number: H02M1/44 ,  H02M1/32 ,  H02M2001/322

Abstract: A discharge circuit for an EMI filter capacitor includes normally-ON transistors. The normally-ON transistors may be controlled to limit current through them when an AC source is coupled across the discharge circuit. When the AC source is disconnected from the discharge circuit, the normally-ON transistors turn ON to allow current flow through them. The current flow allows the EMI filter capacitor to be discharged by a discharge resistor.

Abstract translation: 用于EMI滤波电容器的放电电路包括常开晶体管。 当AC源耦合在放电电路两端时，可以控制常ON晶体管以限制通过它们的电流。 当交流电源与放电电路断开连接时，常开晶体管导通，允许电流流过它们。 电流流过允许EMI滤波电容通过放电电阻放电。