公开(公告)号：US11148449B2

公开(公告)日：2021-10-19

申请号：US15580986

申请日：2016-06-10

Applicant: Danmarks Tekniske Universitet

Inventor： Xiaolong Zhu ,  Anders Kristensen ,  Emil Højlund-Nielsen ,  Christoph Vannahme ,  Niels Asger Mortensen

IPC: B41M5/34 ,  G02B5/00 ,  G11B11/03 ,  B41M5/46 ,  B41M7/00 ,  B23K26/354 ,  B41M5/40 ,  G02B5/18 ,  G02B5/20

Abstract: There is presented a method for geometrically modifying plasmonic structures on a support structure, such as for printing or recording, said method comprising changing a geometry specifically of plasmonic structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the plasmonic structures within the second plurality of plasmonic structures by irradiating, the plasmonic structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of plasmonic structures, wherein said incident intensity is less than an incident intensity required to melt a film of a corresponding material and a corresponding thickness as the plasmonic structures within the second plurality of plasmonic structures.

公开(公告)号：US20190339543A1

公开(公告)日：2019-11-07

申请号：US16470782

申请日：2017-12-22

Applicant: Danmarks Tekniske Universitet

Inventor： Xiaolong Zhu ,  Anders Kristensen ,  Niels Asger Mortensen

IPC: G02C7/02 ,  G02C7/04

Abstract: There is presented a method for geometrically modifying high-index dielectric structures on a support structure, said method comprising providing a support structure, a first plurality of high-index dielectric structures being supported by the support structure, said method further comprising changing a geometry specifically of high-index dielectric structures within a second plurality of high-index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures, and thereby exciting resonances associated with each of the high- index dielectric structures within the second plurality of high-index dielectric structures, wherein said support structure comprises a first plurality of topographical features, and wherein the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features, and/or holes in a high-index dielectric film, wherein said holes correspond to said topographical features.

公开(公告)号：US20180178571A1

公开(公告)日：2018-06-28

申请号：US15580986

申请日：2016-06-10

Applicant: Danmarks Tekniske Universitet

Inventor： Xiaolong Zhu ,  Anders Kristensen ,  Emil Højlund-Nielsen ,  Christoph Vannahme ,  Niels Asger Mortensen

IPC: B41M5/34 ,  B41M5/40

CPC classification number: B41M5/34 ,  B41M5/40 ,  G02B5/008 ,  G02B5/1809 ,  G02B5/1842 ,  G02B5/203 ,  G02B2207/101

Abstract: There is presented a method for geometrically modifying plasmonic structures on a support structure, such as for printing or recording, said method comprising changing a geometry specifically of plasmonic structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the plasmonic structures within the second plurality of plasmonic structures by irradiating, the plasmonic structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of plasmonic structures, wherein said incident intensity is less than an incident intensity required to melt a film of a corresponding material and a corresponding thickness as the plasmonic structures within the second plurality of plasmonic structures.

公开(公告)号：US11899285B2

公开(公告)日：2024-02-13

申请号：US16470782

申请日：2017-12-22

Applicant: Danmarks Tekniske Universitet

Inventor： Xiaolong Zhu ,  Anders Kristensen ,  Niels Asger Mortensen

IPC: G02C7/02 ,  G02C7/04

CPC classification number: G02C7/022 ,  G02C7/049

Abstract: There is presented a method for geometrically modifying high-index dielectric structures on a support structure which includes steps of providing a support structure and a first plurality of high-index dielectric structures supported by the support structure. The method includes changing a geometry of the high-index dielectric structures within a second plurality of high-index dielectric structures, being a sub-set of the first plurality of high-index dielectric structures. The geometry is changed by photothermally melting some of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating them with incident electromagnetic radiation, and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures. The support structure comprises a first plurality of topographical features and the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features and holes in a high-index dielectric film.