公开(公告)号：US08598775B2

公开(公告)日：2013-12-03

申请号：US12514761

申请日：2007-12-07

申请人： Dae Won Kim ,  Do Hyung Kim ,  Dae Sung Kal ,  In Kyu Park

发明人： Dae Won Kim ,  Do Hyung Kim ,  Dae Sung Kal ,  In Kyu Park

IPC分类号： H01J1/62

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/48137 ,  H01L2224/49107

摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.

摘要翻译： 所公开的发光器件包括至少一个第一发光元件，其包括用于发射波长为400〜500nm的光的至少一个发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

公开(公告)号：US08872419B2

公开(公告)日：2014-10-28

申请号：US13151943

申请日：2011-06-02

申请人： Dae Won Kim ,  Do Hyung Kim ,  Dae Sung Kal ,  In Kyu Park

发明人： Dae Won Kim ,  Do Hyung Kim ,  Dae Sung Kal ,  In Kyu Park

IPC分类号： F21V7/22 ,  F21K99/00 ,  H01L27/15 ,  H01L25/075

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/48137 ,  H01L2224/49107

摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.

摘要翻译： 所公开的发光器件包括至少一个第一发光元件，其包括至少一个用于发射波长为400至500nm的光的发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

公开(公告)号：US20100045154A1

公开(公告)日：2010-02-25

申请号：US12514761

申请日：2007-12-07

申请人： Dae Won Kim ,  Do Hyung Kim ,  Dae Sung Kal ,  In Kyu Park

发明人： Dae Won Kim ,  Do Hyung Kim ,  Dae Sung Kal ,  In Kyu Park

IPC分类号： H01J1/62

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/48137 ,  H01L2224/49107

摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.

摘要翻译： 所公开的发光器件包括至少一个第一发光元件，其包括至少一个用于发射波长为400至500nm的光的发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

公开(公告)号：US20100051977A1

公开(公告)日：2010-03-04

申请号：US12514522

申请日：2006-12-18

申请人： Dae Won Kim ,  Dae Won Kim ,  Dae Sung Kal

发明人： Dae Won Kim ,  Dae Won Kim ,  Dae Sung Kal

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2224/73265

摘要： Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell. Accordingly, there can be provided a light emitting device wherein particles are prevented from remaining between the plurality of light emitting cells to prevent current leakage between the light emitting cells. Further, there can be provided a light emitting device wherein the regions between light emitting cells are filled with an isolating insulative layer to facilitate formation of the wirings.

摘要翻译： 公开了一种具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法。 发光器件包括衬底和形成在衬底上的多个发光单元。 每个发光单元包括下半导体层，位于下半导体层的一个区域上的上半导体层和插入在下半导体层和上半导体层之间的有源层。 此外，隔离绝缘层填充在多个发光单元之间的区域中，以将发光单元彼此隔离。 此外，布线将发光元件彼此电连接。 每个布线连接一个发光单元的下半导体层和与一个发光单元相邻的另一个发光单元的上半导体层。 因此，可以提供一种防止颗粒被保留在多个发光单元之间以防止发光单元之间的电流泄漏的发光装置。 此外，可以提供一种发光器件，其中发光单元之间的区域填充有隔离绝缘层以促进布线的形成。

公开(公告)号：US07772588B1

公开(公告)日：2010-08-10

申请号：US12616610

申请日：2009-11-11

申请人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Ki Bum Nam

发明人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Ki Bum Nam

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/1053 ,  H01S5/341 ,  H01S5/3412

摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The at least one carrier trap portion is distributed at a higher density than a dislocation density of the layer including the carrier trap portion, and the carrier trap portion has a size of 1˜10 nm.

摘要翻译： 发光器件可用于发光二极管和激光二极管。 发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层 半导体层。 载流子捕获部分形成在多量子阱结构内的至少一层中。 所述至少一个载流子捕获部以比包含所述载流子捕获部的层的位错密度高的密度分布，所述载流子捕获部的尺寸为1〜10nm。

公开(公告)号：US07709849B1

公开(公告)日：2010-05-04

申请号：US12620887

申请日：2009-11-18

申请人： Dae Sung Kal ,  Dae Won Kim ,  Won Cheol Seo ,  Kyung Hee Ye ,  Joo Woong Lee

发明人： Dae Sung Kal ,  Dae Won Kim ,  Won Cheol Seo ,  Kyung Hee Ye ,  Joo Woong Lee

IPC分类号： H01L29/18

CPC分类号： H01L27/153 ,  H01L24/24 ,  H01L33/44 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/24137 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

公开(公告)号：US08232565B2

公开(公告)日：2012-07-31

申请号：US12607644

申请日：2009-10-28

申请人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

发明人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

摘要翻译： 本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

公开(公告)号：US07868337B2

公开(公告)日：2011-01-11

申请号：US12136915

申请日：2008-06-11

申请人： Hwa Mok Kim ,  Duck Hwan Oh ,  Dae Won Kim ,  Dae Sung Kal

发明人： Hwa Mok Kim ,  Duck Hwan Oh ,  Dae Won Kim ,  Dae Sung Kal

IPC分类号： H01L33/00

CPC分类号： H01L33/325 ,  H01L33/06

摘要： Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.

摘要翻译： 提供一种发光二极管（LED）及其制造方法。 LED包括n型半导体层，有源层和p型半导体层。 活性层包括交替层压至少两次的阱层和阻挡层。 阻挡层的厚度至少比阱层的厚度大两倍。

公开(公告)号：US07863599B2

公开(公告)日：2011-01-04

申请号：US12203762

申请日：2008-09-03

申请人： Hwa Mok Kim ,  Dae Won Kim ,  Dae Sung Kal

发明人： Hwa Mok Kim ,  Dae Won Kim ,  Dae Sung Kal

IPC分类号： H01L29/06

CPC分类号： H01L33/465 ,  H01L33/105 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

摘要翻译： 发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和 电极焊盘，布置在透明电极层上以覆盖开口中的DBR。

公开(公告)号：US07768020B2

公开(公告)日：2010-08-03

申请号：US12515869

申请日：2007-03-13

申请人： Dae Won Kim ,  Yeo Jin Yoon ,  Dae Sung Kal

发明人： Dae Won Kim ,  Yeo Jin Yoon ,  Dae Sung Kal

IPC分类号： H01L29/18 ,  H01L33/00

CPC分类号： H01L27/15 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 D, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.

摘要翻译： 本文公开了AC发光二极管。 发光二极管包括二维布置在单个基板上的多个发光单元。 导线将发光单元彼此电连接从而形成发光单元的串联阵列。 此外，发光单元彼此隔开距离在10至30D的范围内，串联阵列在连接到交流电源时工作。 因此，可以在具有有限尺寸的AC发光二极管中确保优异的操作特性和光输出功率。