Process for the hydrophobization of higher dispersed oxides
    2.
    发明授权
    Process for the hydrophobization of higher dispersed oxides 失效
    高分散氧化物的疏水化方法

    公开(公告)号:US3873337A

    公开(公告)日:1975-03-25

    申请号:US38642973

    申请日:1973-08-07

    申请人: DEGUSSA

    摘要: Highly dispersed oxides of metals and/or silicon are hydrophobized by treatment with volatilizable organosilicon compounds in the gas phase. The oxide particles either come fresh from the production plant or are previously absolutely dried, and activated i.e., freed of physically and chemically bound water, in a fluidized bed with a dry inert gas stream at a temperature of 550* to 1000*C., preferably 600* to 950*C. under normal pressure in a few seconds to a few minutes, preferably in a time of 1 to 60 seconds. The oxide particles are reacted with a stoichiometrical mixture of at least one dialkyldichlorosilane and water in the ratio of 1:1 at a temperature of 350*C. to 650*C. in an atmosphere of CO2. There can also be used diaryldichlorosilanes.

    摘要翻译: 金属和/或硅的高度分散的氧化物通过在气相中用可挥发的有机硅化合物处理来疏水化。 氧化物颗粒从生产设备中新鲜出来,或者在550℃至1000℃的温度下,在干燥的惰性气流中在流化床中预先绝对干燥并活化,即,物理和化学结合的水, 优选600-950℃,常压下几秒至几分钟,优选在1至60秒的时间内。 氧化物颗粒在CO 2气氛中,在350℃至650℃的温度下,以1:1的比例与至少一种二烷基二氯硅烷和水的化学计量混合物反应。 也可以使用二芳基二氯硅烷。

    Process of making super-dry silicon dioxide
    3.
    发明授权
    Process of making super-dry silicon dioxide 失效
    制造超级二氧化硅的工艺

    公开(公告)号:US3859420A

    公开(公告)日:1975-01-07

    申请号:US17538271

    申请日:1971-08-26

    申请人: DEGUSSA

    摘要: A super-dry finely dispersed silicon dioxide that is free of adsorbed water and hydrogen bonded silanol groups, so-called ''''bonded'''' silanol groups, is made by subjecting the silicon dioxide to a current of dry gas in a fluidizing bed at a temperature from about 700* to about 1,000* C and at normal pressure for a period from a few seconds to a few minutes. The product obtained is characterized also by retaining the more widely spaced isolated hydroxyl groups which cannot interact with one another by formation of hydrogen bridges.