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1.发明申请公开(公告)号：US20140024178A1
公开(公告)日：2014-01-23
申请号：US13631204
申请日：2012-09-28
IPC分类号： H01L21/56
CPC分类号： C25D17/001 , C25D17/06 , H01L21/68721 , H01L23/3114 , H01L2924/0002 , H01L2924/00
摘要： A wafer plating jig system comprising an electrically insulating wafer plating jig base having a plurality of overlapping cavities of different depths, each cavity configured to receive a semiconductor wafer of a different size and an electrically conductive cover plate comprising an open center surrounded by a support, the cover plate comprising an electrical conductor surrounding the open center and with at least one of the overlapping cavities of the wafer plating jig base.
摘要翻译： 一种晶片电镀夹具系统，包括具有不同深度的多个重叠腔的电绝缘晶片电镀夹具基座，每个空腔被配置为接收不同尺寸的半导体晶片和导电盖板，所述导电盖板包括由支撑件包围的开放中心， 盖板包括围绕开放中心的电导体和晶片电镀夹具基座的至少一个重叠腔体。
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公开(公告)号：US10600652B2
公开(公告)日：2020-03-24
申请号：US15485043
申请日：2017-04-11
IPC分类号： H01L21/306 , H01L21/677 , H01L21/302 , H01L21/461 , H01L23/00 , H01L21/56
摘要： A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.
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公开(公告)号：US20170012009A1
公开(公告)日：2017-01-12
申请号：US15204871
申请日：2016-07-07
IPC分类号： H01L23/00
CPC分类号： H01L21/30604 , H01L21/568 , H01L21/67784 , H01L24/03 , H01L24/05 , H01L24/19 , H01L24/75 , H01L24/76 , H01L24/96 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/03614 , H01L2224/0381 , H01L2224/0391 , H01L2224/0401 , H01L2224/04105 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/742 , H01L2224/7501 , H01L2224/75651 , H01L2224/7665 , H01L2224/94 , H01L2924/18162 , H01L2224/214
摘要： A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.
摘要翻译： 一种从半导体衬底上去除材料层的至少一部分的方法，其可以包括在半导体衬底上分配蚀刻溶液以在该材料层上形成蚀刻溶液池，其中蚀刻池的覆盖区 溶液小于半导体衬底的覆盖区。 蚀刻溶液池和半导体衬底可以相对于彼此移动。 可以使用至少一个气刀在半导体衬底上限定蚀刻溶液池的池边界，使得蚀刻溶液池在蚀刻溶液池的覆盖区内蚀刻半导体衬底上的材料层。 蚀刻溶液和由蚀刻溶液蚀刻的材料层的至少一部分可以用至少一个气刀去除。
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公开(公告)号：US20170221719A1
公开(公告)日：2017-08-03
申请号：US15485043
申请日：2017-04-11
IPC分类号： H01L21/306 , H01L21/677
CPC分类号： H01L21/30604 , H01L21/568 , H01L21/67784 , H01L24/03 , H01L24/05 , H01L24/19 , H01L24/75 , H01L24/76 , H01L24/96 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/03614 , H01L2224/0381 , H01L2224/0391 , H01L2224/0401 , H01L2224/04105 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/742 , H01L2224/7501 , H01L2224/75651 , H01L2224/7665 , H01L2224/94 , H01L2924/18162 , H01L2224/214
摘要： A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.
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公开(公告)号：US09640495B2
公开(公告)日：2017-05-02
申请号：US15204871
申请日：2016-07-07
IPC分类号： H01L21/302 , H01L21/461 , H01L23/00
CPC分类号： H01L21/30604 , H01L21/568 , H01L21/67784 , H01L24/03 , H01L24/05 , H01L24/19 , H01L24/75 , H01L24/76 , H01L24/96 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/03614 , H01L2224/0381 , H01L2224/0391 , H01L2224/0401 , H01L2224/04105 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/742 , H01L2224/7501 , H01L2224/75651 , H01L2224/7665 , H01L2224/94 , H01L2924/18162 , H01L2224/214
摘要： A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.
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公开(公告)号：US09464362B2
公开(公告)日：2016-10-11
申请号：US13631204
申请日：2012-09-28
IPC分类号： C25D17/06 , H01L21/687 , C25D17/00 , H01L23/31
CPC分类号： C25D17/001 , C25D17/06 , H01L21/68721 , H01L23/3114 , H01L2924/0002 , H01L2924/00
摘要： A wafer plating jig system comprising an electrically insulating wafer plating jig base having a plurality of overlapping cavities of different depths, each cavity configured to receive a semiconductor wafer of a different size and an electrically conductive cover plate comprising an open center surrounded by a support, the cover plate comprising an electrical conductor surrounding the open center and with at least one of the overlapping cavities of the wafer plating jig base.
摘要翻译： 一种晶片电镀夹具系统，包括具有不同深度的多个重叠腔的电绝缘晶片电镀夹具基座，每个空腔被配置为接收不同尺寸的半导体晶片和导电盖板，所述导电盖板包括由支撑件包围的开放中心， 盖板包括围绕开放中心的电导体和晶片电镀夹具基座的至少一个重叠腔体。
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