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公开(公告)号：US20230022946A1
公开(公告)日：2023-01-26
申请号：US17762278
申请日：2020-09-09
Inventor： Kyong Nam KIM , Jun Young PARK , Seok Jun KIM
IPC: H01J37/32 , H01L21/311 , H01J37/34 , H01L21/02 , B08B7/00
Abstract: Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.
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