METHOD OF MAKING UPDOPED CLADDING BY USING SILICON TERTRACHLORIDE AS THE DOPANT
    1.
    发明申请
    METHOD OF MAKING UPDOPED CLADDING BY USING SILICON TERTRACHLORIDE AS THE DOPANT 审中-公开
    通过使用硅酮作为鞣剂制备更好的覆盖物的方法

    公开(公告)号:US20160152510A1

    公开(公告)日:2016-06-02

    申请号:US14997780

    申请日:2016-02-15

    Abstract: One embodiment of the disclosure relates to a method of making an optical fiber comprising the steps of: (i) exposing a silica based preform with at least one porous glass region having soot density of ρ to a gas mixture comprising SiCl4 having SiCl4 mole fraction ySiCl4 at a doping temperature Tdop such that parameter X is larger than 0.03 to form the chlorine treated preform, wherein X = 1 1 + [ ( ρ ρ s - ρ )  0.209748   T dop  Exp  [ - 5435.33 / T dop ] y SiCl   4 3 / 4 ] and ρs is the density of the fully densified soot layer; and (ii) exposing the chlorine treated preform to temperatures above 1400° C. to completely sinter the preform to produce sintered optical fiber preform with a chlorine doped region; and (iii) drawing an optical fiber from the sintered optical preform.

    Abstract translation: 本公开的一个实施方案涉及一种制造光纤的方法,包括以下步骤:(i)将二氧化硅基预型体暴露于具有烟炱密度的至少一个多孔玻璃区域; 在掺杂温度Tdop下将SiCl 4的SiCl 4摩尔分数为ySiCl4的气体混合物混合,使得参数X大于0.03以形成经氯处理的预制件,其中X = 11 + [(&rgr; s - &rgr;))0.209748 实验表明,完全致密的煤烟层的密度为 和(ii)将氯处理的预制件暴露于高于1400℃的温度下,以完全烧结预成型件,以制备具有氯掺杂区域的烧结光纤预制件; 和(iii)从烧结的光学预型件拉制光纤。

    Method of making updoped cladding by using silicon tertrachloride as the dopant
    4.
    发明授权
    Method of making updoped cladding by using silicon tertrachloride as the dopant 有权
    通过使用四氯化硅作为掺杂剂来制造上覆层的方法

    公开(公告)号:US09290405B2

    公开(公告)日:2016-03-22

    申请号:US14467369

    申请日:2014-08-25

    Abstract: One embodiment of the disclosure relates to a method of making an optical fiber comprising the steps of: (i) exposing a silica based preform with at least one porous glass region having soot density of ρ to a gas mixture comprising SiCl4 having SiCl4 mole fraction ySiCl4 at a doping temperature Tdop such that parameter X is larger than 0.03 to form the chlorine treated preform, wherein X = 1 1 + [ ( ρ ρ s - ρ ) ⁢ 0.209748 ⁢ T dop ⁢ Exp ⁡ [ - 5435.33 / T dop ] y SiCl ⁢ ⁢ 4 3 / 4 ] and ρs is the density of the fully densified soot layer; and (ii) exposing the chlorine treated preform to temperatures above 1400° C. to completely sinter the preform to produce sintered optical fiber preform with a chlorine doped region; and (iii) drawing an optical fiber from the sintered optical preform.

    Abstract translation: 本公开的一个实施方案涉及一种制造光纤的方法,包括以下步骤:(i)将二氧化硅基预型体暴露于具有烟炱密度的至少一个多孔玻璃区域; 涉及在掺杂温度Tdop下包括具有SiCl 4摩尔分数ySiCl 4的SiCl 4的气体混合物,使得参数X大于0.03以形成经氯处理的预成型体,其中X = 11 + [(&rgr; s - &rgr;)0.209748 T dop Exp] [ - 5435.33 / T dop] y SiClü务4 3/4]和&rgr; s是完全致密的烟灰层的密度; 和(ii)将氯处理的预制件暴露于高于1400℃的温度下,以完全烧结预成型件,以制备具有氯掺杂区域的烧结光纤预制件; 和(iii)从烧结的光学预型件拉制光纤。

    METHOD OF MAKING UPDOPED CLADDING BY USING SILICON TERTRACHLORIDE AS THE DOPANT
    8.
    发明申请
    METHOD OF MAKING UPDOPED CLADDING BY USING SILICON TERTRACHLORIDE AS THE DOPANT 有权
    通过使用硅酮作为鞣剂制备更好的覆盖物的方法

    公开(公告)号:US20150225280A1

    公开(公告)日:2015-08-13

    申请号:US14467369

    申请日:2014-08-25

    Abstract: One embodiment of the disclosure relates to a method of making an optical fiber comprising the steps of: (i) exposing a silica based preform with at least one porous glass region having soot density of ρ to a gas mixture comprising SiCl4 having SiCl4 mole fraction ySiCl4 at a doping temperature Tdop such that parameter X is larger than 0.03 to form the chlorine treated preform, wherein X = 1 1 + [ ( ρ ρ s - ρ )  0.209748  T dop  Exp  [ - 5435.33 / T dop ] y SiCl   4 3 / 4 ] and ρs is the density of the fully densified soot layer; and (ii) exposing the chlorine treated preform to temperatures above 1400° C. to completely sinter the preform to produce sintered optical fiber preform with a chlorine doped region; and (iii) drawing an optical fiber from the sintered optical preform.

    Abstract translation: 本公开的一个实施方案涉及一种制造光纤的方法,包括以下步骤:(i)将二氧化硅基预型体暴露于具有烟炱密度的至少一个多孔玻璃区域; 在掺杂温度Tdop下将SiCl 4的SiCl 4摩尔分数为ySiCl4的气体混合物混合,使得参数X大于0.03以形成经氯处理的预制件,其中X = 11 + [(&rgr; s - &rgr;))0.209748 [... 5435.33 / T dop] y SiCl 4 3/4]和&rgr; s是完全致密的烟灰层的密度; 和(ii)将氯处理的预制件暴露于高于1400℃的温度下,以完全烧结预成型件,以制备具有氯掺杂区域的烧结光纤预制件; 和(iii)从烧结的光学预型件拉制光纤。

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