公开(公告)号：US20130016457A1

公开(公告)日：2013-01-17

申请号：US13181531

申请日：2011-07-13

申请人： Chih-Wei Chen ,  Hsi-Hsing Hsu ,  Che-Kai Lin

发明人： Chih-Wei Chen ,  Hsi-Hsing Hsu ,  Che-Kai Lin

IPC分类号： H05K5/00

CPC分类号： H04M1/0237 ,  Y10T74/1555

摘要： A handheld electronic device includes a first body, a second body, and a locating member. The second body is slidably connected to the first body, and has a slide surface and a locating opening. The locating opening is located at an end of the slide surface. The locating member has an elastic portion and a sliding portion, the elastic portion is disposed between the first body and the sliding portion, and the sliding portion is capable of leaning against the slide surface or being inserted in the locating opening under an elastic prestress of the elastic portion.

摘要翻译： 手持电子设备包括第一主体，第二主体和定位构件。 第二主体可滑动地连接到第一主体，并且具有滑动面和定位开口。 定位开口位于滑动表面的一端。 定位构件具有弹性部分和滑动部分，弹性部分设置在第一主体和滑动部分之间，并且滑动部分能够抵靠滑动表面倾斜或者在弹性预定位置处插入到定位开口中 弹性部分。

公开(公告)号：US08824139B2

公开(公告)日：2014-09-02

申请号：US13181531

申请日：2011-07-13

申请人： Chih-Wei Chen ,  Hsi-Hsing Hsu ,  Che-Kai Lin

发明人： Chih-Wei Chen ,  Hsi-Hsing Hsu ,  Che-Kai Lin

IPC分类号： H05K5/00 ,  H05K7/00 ,  G11B33/02 ,  A47G1/10 ,  E04G3/00 ,  A47B96/06 ,  E05C5/02 ,  H04M1/02

CPC分类号： H04M1/0237 ,  Y10T74/1555

摘要： A handheld electronic device includes a first body, a second body, and a locating member. The second body is slidably connected to the first body, and has a slide surface and a locating opening. The locating opening is located at an end of the slide surface. The locating member has an elastic portion and a sliding portion, the elastic portion is disposed between the first body and the sliding portion, and the sliding portion is capable of leaning against the slide surface or being inserted in the locating opening under an elastic prestress of the elastic portion.

摘要翻译： 手持电子设备包括第一主体，第二主体和定位构件。 第二主体可滑动地连接到第一主体，并且具有滑动面和定位开口。 定位开口位于滑动表面的一端。 定位构件具有弹性部分和滑动部分，弹性部分设置在第一主体和滑动部分之间，并且滑动部分能够抵靠滑动表面倾斜或者在弹性预定位置处插入到定位开口中 弹性部分。

公开(公告)号：US20090315077A1

公开(公告)日：2009-12-24

申请号：US12141133

申请日：2008-06-18

申请人： Hsien-Chin Chiu ,  Liann-Be Chang ,  Che-Kai Lin

发明人： Hsien-Chin Chiu ,  Liann-Be Chang ,  Che-Kai Lin

IPC分类号： H01L29/778

CPC分类号： H01L29/7782 ,  H01L29/42312 ,  H01L29/778 ,  H01L31/022466 ,  H01L31/108

摘要： A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.

摘要翻译： 具有透明栅极的多层结构包括MHEMT器件结构，其包括形成在肖特基层上的GaAs衬底，肖特基层和覆盖层; 形成在肖特基层上的透明栅极为铟锡氧化物ITO; 以及形成在盖层上的漏极和源极。 此外，MHEMT器件结构包括梯度缓冲器，缓冲层，第一间隔层，沟道层和以GaAs堆叠方式形成在GaAs衬底和肖特基层之间的第二间隔层。 多层结构是使用氧化铟锡的透明栅极HEMT，其可以使HEMT对光波更敏感。

公开(公告)号：US07745853B2

公开(公告)日：2010-06-29

申请号：US12141133

申请日：2008-06-18

申请人： Hsien-Chin Chiu ,  Liann-Be Chang ,  Che-Kai Lin

发明人： Hsien-Chin Chiu ,  Liann-Be Chang ,  Che-Kai Lin

IPC分类号： H01L29/778

CPC分类号： H01L29/7782 ,  H01L29/42312 ,  H01L29/778 ,  H01L31/022466 ,  H01L31/108

摘要： A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.

摘要翻译： 具有透明栅极的多层结构包括MHEMT器件结构，其包括形成在肖特基层上的GaAs衬底，肖特基层和覆盖层; 形成在肖特基层上的透明栅极为铟锡氧化物ITO; 以及形成在盖层上的漏极和源极。 此外，MHEMT器件结构包括梯度缓冲器，缓冲层，第一间隔层，沟道层和以GaAs堆叠方式形成在GaAs衬底和肖特基层之间的第二间隔层。 多层结构是使用氧化铟锡的透明栅极HEMT，其可以使HEMT对光波更敏感。