Bipolar switching transistor using a Schottky diode clamp
    1.
    发明授权
    Bipolar switching transistor using a Schottky diode clamp 失效
    使用肖特基二极管钳位的双极开关晶体管

    公开(公告)号:US4037115A

    公开(公告)日:1977-07-19

    申请号:US699950

    申请日:1976-06-25

    IPC分类号: H03K19/088 H03K19/40 H03K5/08

    CPC分类号: H03K19/088

    摘要: A transistor-transistor logic gate is described which uses a number of bipolar switching transistors clamped in several different ways. In particular to better adapt a bipolar switching transistor to high frequency, high temperature operation, the collectors of the various switching transistors are clamped in a variety of novel ways, each to achieve a collector voltage higher than that normally achieved by the conventional Schottky diode clamp connected between the base and collector.

    摘要翻译: 描述了晶体管晶体管逻辑门,其使用以若干不同方式钳位的多个双极性开关晶体管。 特别是为了更好地将双极开关晶体管适应于高频,高温操作,各种开关晶体管的集电极以各种新颖的方式被钳位,每种都采用高于通常由常规肖特基二极管钳位实现的集电极电压 连接在基座和收集器之间。