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    Substrate structure and method of forming the same
    2.
    发明申请
    Substrate structure and method of forming the same 有权
    底物结构及其形成方法

    公开(公告)号：US20090252938A1

    公开(公告)日：2009-10-08

    申请号：US12222444

    申请日：2008-08-08

    申请人： Chan Wook Baik ,  Jong Seok Kim ,  Sun II Kim ,  Young Mok Son

    发明人： Chan Wook Baik ,  Jong Seok Kim ,  Sun II Kim ,  Young Mok Son

    IPC分类号： B32B3/10 ,  B05D5/12

    CPC分类号： C23C14/16 ,  C23C14/022 ,  C23C14/5806 ,  H01L21/30655 ,  H01L2924/0002 ,  Y10T428/24917 ,  H01L2924/00

    摘要： Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.

    摘要翻译： 提供一种基板结构及其形成方法。 形成衬底结构的方法可以包括蚀刻衬底以形成具有垂直表面的蚀刻部分，在整个衬底或衬底的一部分中形成扩散材料层; 使扩散材料层退火，形成向蚀刻部分的表面向下扩散的晶种层，并在籽晶层上形成金属层。 因此，可以通过晶种层增强基板的蚀刻部分的表面特性，因此，可以在蚀刻部分的垂直表面上形成具有改善的粘附性和均匀厚度的金属层。

    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method
    3.
    发明授权
    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
    使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器

    公开(公告)号：US08514027B2

    公开(公告)日：2013-08-20

    申请号：US13306146

    申请日：2011-11-29

    申请人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

    发明人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

    IPC分类号： H03B5/30 ,  B44C1/22

    CPC分类号： H01P11/003 ,  Y10T428/24802

    摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.

    摘要翻译： 提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。 该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上， 与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层 基板和第二基板。

    METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD
    4.
    发明申请
    METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 审中-公开
    使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法

    公开(公告)号：US20130069731A1

    公开(公告)日：2013-03-21

    申请号：US13606533

    申请日：2012-09-07

    申请人： Chan Wook Baik ,  Seog Woo Hong ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun IL Kim

    发明人： Chan Wook Baik ,  Seog Woo Hong ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun IL Kim

    IPC分类号： H03B28/00 ,  B44C1/22

    CPC分类号： H03B28/00 ,  B44C1/227 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/00

    摘要： A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.

    摘要翻译： 一种多级衬底蚀刻的方法，包括在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，由此防止在台面上出现底面和突出结构中的曲率半径。

    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method
    5.
    发明授权
    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
    使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器

    公开(公告)号：US08293124B2

    公开(公告)日：2012-10-23

    申请号：US12073311

    申请日：2008-03-04

    申请人： Chan Wook Baik ,  Seog Woo Hong ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim

    发明人： Chan Wook Baik ,  Seog Woo Hong ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim

    IPC分类号： G03F7/20 ,  B44C1/22

    CPC分类号： H03B28/00 ,  B44C1/227 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/00

    摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.

    摘要翻译： 提供了一种多级衬底蚀刻的方法。 该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此 改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method
    6.
    发明授权
    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
    使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器

    公开(公告)号：US08092702B2

    公开(公告)日：2012-01-10

    申请号：US12025186

    申请日：2008-02-04

    申请人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

    发明人： Chan Wook Baik ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim ,  Jong Min Kim ,  Chan Bong Jun ,  Sang Hun Lee

    IPC分类号： B44C1/22

    CPC分类号： H01P11/003 ,  Y10T428/24802

    摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.

    摘要翻译： 提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。 该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上， 与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层 衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。 此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性 获得振荡器或放大器。

    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method
    7.
    发明申请
    Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
    使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器

    公开(公告)号：US20090120903A1

    公开(公告)日：2009-05-14

    申请号：US12073311

    申请日：2008-03-04

    申请人： Chan Wook Baik ,  Seog Woo Hong ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim

    发明人： Chan Wook Baik ,  Seog Woo Hong ,  Jong Seok Kim ,  Seong Chan Jun ,  Sun Il Kim

    IPC分类号： G03F7/20 ,  B44C1/22

    CPC分类号： H03B28/00 ,  B44C1/227 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/00

    摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.

    摘要翻译： 提供了一种多级衬底蚀刻的方法。 该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此 改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

    Dryer
    9.
    发明授权
    Dryer 有权
    烘干机

    公开(公告)号：US09121128B2

    公开(公告)日：2015-09-01

    申请号：US13580735

    申请日：2011-02-25

    申请人： Sog Kie Hong ,  Jong Seok Kim ,  Sung Min Kim ,  Dae Yun Park

    发明人： Sog Kie Hong ,  Jong Seok Kim ,  Sung Min Kim ,  Dae Yun Park

    IPC分类号： D06F58/20 ,  D06F58/02 ,  D06F58/04

    CPC分类号： D06F58/02 ,  D06F58/04 ,  D06F58/20 ,  D06F58/26

    摘要： A dryer is provided. The dryer (1) includes a cabinet (10), a drum (11), a rear supporter (30), and a dry duct (42). The cabinet (10) defines an external appearance. The drum (21) is rotatably provided in the cabinet an housing articles to be dried. The rear supporter (30) supports a rear end of the drum (21). The dry duct (42) supplies dry air. Here, the dry duct (42) is connected to a circumference of the rear supporter (30) to supply the dry air into the drum through the circumference of the rear supporter.

    摘要翻译： 提供烘干机。 干燥机（1）包括机壳（10），滚筒（11），后支撑件（30）和干管（42）。 机柜（10）定义外观。 滚筒（21）可旋转地设置在机柜中，以便待干燥的外壳物品。 后支撑件（30）支撑滚筒（21）的后端。 干燥管道（42）供应干燥空气。 这里，干燥管道42连接到后部支撑件30的周边，以通过后部支撑件的圆周将干燥空气供应到滚筒中。

    Laundry treating machine
    10.
    发明授权
    Laundry treating machine 有权

    公开(公告)号：US08418509B2

    公开(公告)日：2013-04-16

    申请号：US12385065

    申请日：2009-03-30

    申请人： Hea Kyung Yoo ,  Dae Yun Park ,  Jong Seok Kim ,  Dong Won Kim ,  Sog Kie Hong

    发明人： Hea Kyung Yoo ,  Dae Yun Park ,  Jong Seok Kim ,  Dong Won Kim ,  Sog Kie Hong

    IPC分类号： B08B3/12 ,  D06F37/00

    CPC分类号： D06F58/203 ,  D06F25/00 ,  D06F39/008 ,  D06F73/02

    摘要： A laundry treating machine is disclosed. The present invention relates to a laundry treating machine capable of minimizing the number of parts required to discharge the generated condensate as possible and of simplifying the drainage path. A laundry treating machine includes a cabinet in which an accomodating space receiving laundry therein is formed, a moisture supply device supplying moisture to the accomodating space, a water supply part connected with the moisture supply device to supply water, a water discharge part discharging water condensed from the moisture supplied by the moisture supply device or water remaining in the moisture supply device, a circulation duct to draw-in air of the accomodating space and discharging the air into the accomodating space, and a heat exchanging part provided in the circulation duct, the heat exchanger in which circulated air is dehumidified or heated.