公开(公告)号：US3991328A

公开(公告)日：1976-11-09

申请号：US589855

申请日：1975-06-24

申请人： Chainulu Lakshminarasimha Upadhyayula

发明人： Chainulu Lakshminarasimha Upadhyayula

IPC分类号： H01L47/00 ,  H03K3/357 ,  H03K3/26 ,  H01L27/26 ,  H03F1/36

CPC分类号： H03K3/357 ,  H01L47/00

摘要： A planar transferred electron device is biased such that the voltage across the anode and cathode electrodes is above that of a threshold voltage in the presence of which the device is characterized by a transfer of electrons from a high to a low mobility sub-band and the formation of domains. A reverse biasing potential is applied between the gate and cathode electrodes which is of sufficient magnitude to cause in the quiescent state the suppression of the formation of these domains. When signals above a given level are provided between the gate and cathode electrodes, the device operates according to a transferred electron effect including the formation of the domains.

摘要翻译： 平面转移的电子器件被偏置，使得阳极和阴极电极两端的电压高于阈值电压的电压，器件的特征在于电子从高迁移率子载波子带传递到低迁移率子带， 形成域。 在栅电极和阴极电极之间施加反向偏置电位，其具有足够的量级，从而在静止状态下抑制这些畴的形成。 当在栅极和阴极之间提供高于给定电平的信号时，器件根据包括形成畴的转移的电子效应进行工作。

公开(公告)号：US3959807A

公开(公告)日：1976-05-25

申请号：US572020

申请日：1975-04-28

申请人： Chainulu Lakshminarasimha Upadhyayula ,  Subrahmanyam Yegna Narayan

发明人： Chainulu Lakshminarasimha Upadhyayula ,  Subrahmanyam Yegna Narayan

IPC分类号： H01L27/26 ,  H03F1/36

CPC分类号： H01L27/26

摘要： A large voltage swing across a typical planar transferred electron logic device is achieved by a nonlinear load resistor in series with the transferred electron device. The nonlinear load resistor includes a body of transferred electron effect material with an adjacent layer of high dielectric material. The layer is of sufficiently high dielectric material so that the load resistor so formed saturates at a current standoff point provided by the bias source of the logic device.