Silicon nanoparticle white light emitting device
    1.
    发明授权
    Silicon nanoparticle white light emitting device 有权
    硅纳米颗粒白光发光装置

    公开(公告)号:US08143079B2

    公开(公告)日:2012-03-27

    申请号:US13116161

    申请日:2011-05-26

    Abstract: Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans.

    Abstract translation: 红 - 绿 - 蓝(RGB)发光硅纳米颗粒的多个膜集成在级联配置中作为紫外/蓝色发光二极管(LED)中的顶涂层,以将其转换成白色LED。 RGB发光硅纳米颗粒膜的构造利用了从UV /蓝色LED发射的光的短波长部分,同时有效地传输较长波长部分。 该配置还降低了对设备和人类的热和/或紫外线影响的损害。

    Silicon Nanoparticle White Light Emitting Device
    2.
    发明申请
    Silicon Nanoparticle White Light Emitting Device 有权
    硅纳米微粒白光发射装置

    公开(公告)号:US20110229995A1

    公开(公告)日:2011-09-22

    申请号:US13116161

    申请日:2011-05-26

    Abstract: Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans.

    Abstract translation: 红 - 绿 - 蓝(RGB)发光硅纳米颗粒的多个膜集成在级联配置中作为紫外/蓝色发光二极管(LED)中的顶涂层,以将其转换成白色LED。 RGB发光硅纳米颗粒膜的构造利用了从UV /蓝色LED发射的光的短波长部分,同时有效地传输较长波长部分。 该配置还降低了对设备和人类的热和/或紫外线影响的损害。

    Silicon nanoparticle white light emitting diode device
    3.
    发明授权
    Silicon nanoparticle white light emitting diode device 有权
    硅纳米颗粒白光发光二极管装置

    公开(公告)号:US07989833B2

    公开(公告)日:2011-08-02

    申请号:US12354552

    申请日:2009-01-15

    Abstract: Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans.

    Abstract translation: 红 - 绿 - 蓝(RGB)发光硅纳米颗粒的多个膜集成在级联配置中作为紫外/蓝色发光二极管(LED)中的顶涂层,以将其转换成白色LED。 RGB发光硅纳米颗粒膜的构造利用了从UV /蓝色LED发射的光的短波长部分,同时有效地传输较长波长部分。 该配置还降低了对设备和人类的热和/或紫外线影响的损害。

    SILICON NANOPARTICLE WHITE LIGHT EMITTING DIODE DEVICE
    4.
    发明申请
    SILICON NANOPARTICLE WHITE LIGHT EMITTING DIODE DEVICE 有权
    硅纳米白光发光二极管器件

    公开(公告)号:US20100019261A1

    公开(公告)日:2010-01-28

    申请号:US12354552

    申请日:2009-01-15

    Abstract: Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans.

    Abstract translation: 红 - 绿 - 蓝(RGB)发光硅纳米颗粒的多个膜集成在级联配置中作为紫外/蓝色发光二极管(LED)中的顶涂层,以将其转换成白色LED。 RGB发光硅纳米颗粒膜的构造利用了从UV /蓝色LED发射的光的短波长部分,同时有效地传输较长波长部分。 该配置还降低了对设备和人类的热和/或紫外线影响的损害。

    High performance aluminum free active region semiconductor lasers
    5.
    发明授权
    High performance aluminum free active region semiconductor lasers 有权
    高性能无铝有源区半导体激光器

    公开(公告)号:US06219365B1

    公开(公告)日:2001-04-17

    申请号:US09185354

    申请日:1998-11-03

    CPC classification number: B82Y20/00 H01S5/3202 H01S5/3403 H01S5/34326

    Abstract: The semiconductor laser emitting light in the wavelength range of about 700 nm to 800 nm utilizes an aluminum-free active region layer. An epitaxial structure is grown on a GaAs or AlGaAs substrate and includes an active region layer, confinement layers adjacent the active region layer, and cladding layers adjacent the confinement layers. The active region layer comprises at least one compressively strained InGaAsP quantum well surrounded by transitional layers, with the composition and width of the active region selected to emit light at a selected wavelength, particularly between about 700 nm and 800 nm. High band-gap InGaAlP cladding layers and confinement layers may be utilized to suppress carrier leakage, and the epitaxial structure may be grown on a misoriented substrate to further reduce carrier leakage from the quantum well and improve the crystalline quality of the quantum well. The lasers are capable of operating at high powers with high reliability for longer lifetimes than are obtainable with laser structures emitting the same wavelength range which require the use of aluminum in the active region.

    Abstract translation: 在约700nm至800nm的波长范围内发射光的半导体激光器使用无铝活性区域层。 在GaAs或AlGaAs衬底上生长外延结构,并且包括有源区域层,与有源区域层相邻的限制层以及邻近限制层的覆层。 有源区层包括由过渡层包围的至少一个压缩应变的InGaAsP量子阱,其中有源区的组成和宽度被选择为发射选定波长,特别是在约700nm与800nm之间的光。 可以利用高带隙InGaAlP包覆层和限制层来抑制载流子泄漏,并且外延结构可以在取向错误的衬底上生长,以进一步减少量子阱中的载流子泄漏并提高量子阱的结晶质量。 激光器能够以高功率运行,具有比需要在有源区域中使用铝的相同波长范围的激光结构可获得更长寿命的更长寿命。

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