Abstract:
High-voltage circuit arrangement includes a load connected to a power supply of at least 20,000 volts, and a single discrete high-voltage electrical resistor connected to the power supply and load. The high-voltage resistor comprises a spiral resistive path supported on a ceramic substrate which provides a uniform and continuous heat dissipation path between the ends of the resistor. A heat-dissipating mounting member forms an electrical termination for the resistor, rapidly transfers heat away from the substrate, and includes a substrate alignment surface and seat in close proximity to a surface of the substrate. A threaded portion of the heat-dissipating member is useful for mounting the resistor on a supporting surface and insulative means including an insulative jacket surrounds the substrate. High-voltage corona-inhibiting means include an insulative body that extends one-half inch beyond an end of the resistive path and embeds a lead wire connected to the resistive path. The resistive path is a cermet-film-type material having a resistivity of 5 megohms per square, a voltage coefficient of less than 400 parts per million per volt per square, and a voltage withstanding ability of 3,000 volts per inch of resistive path. The resistive path itself comprises an intersticed mass of inert particles and a conductive phase forming an interstitial mass within the intersticed mass. The method includes the steps of positioning the mounting member and substrate at a work station, compressively centering the substrate on the mounting member with a movable platen, controlling the transfer of heat relative to the mounting member, and soldering the mounting member to the substrate.