Abstract:
The resistor 5 is a print-formed body including a meandering shaped first region 8 connected to the first front electrode 3 and a second region 9 connected to the first region 8 via a linking portion 10 and connected to the second front electrode 4. The first region 8 is provided with an I-cut shaped first trimming groove 11 and the second region 9 is provided with an L-cut shaped second trimming groove 12, and the side of the second region 9 positioned in the direction toward which a turn portion 12b of the second trimming groove 12 extends is an oblique side 9a that inclines to approach the second front electrode 4 as it approaches the connecting portion 7.
Abstract:
Device structures and fabrication methods for an on-chip resistor. A dielectric layer includes a trench with a bottom and a sidewall arranged to surround the bottom. A metal layer is disposed on the dielectric layer at the sidewall of the trench. The metal layer includes a surface that terminates the metal layer at the bottom of the trench to define a discontinuity that extends along a length of the trench.
Abstract:
A display device having a data voltage generation circuit and a common voltage generation circuit that are both coupled to a common reference voltage is provided. By utilizing a common ground, variations between the data signals relative to the common voltage may be reduced, thereby improving voltage precision and color accuracy. In one embodiment, the data voltage generation circuit may be a gamma adjustment circuit that utilizes a resistor string having a center grounding point. The common voltage generation circuit may share the resistor string and the grounding point with the gamma adjustment circuit. Thus, data voltage signals and common voltage signals may be derived based on the same voltage reference point. Further, by sharing the resistor string, the total number of circuit components in the display device may be reduced, thereby reducing overall chip area and/or manufacturing costs.
Abstract:
Each die containing a resistive element which is to be trimmed has associated therewith a plurality of alignment targets. A cut mask having a trim pattern and an alignment key formed thereon is employed in a masking and etching step to trim the resistive element to a desired resistance. The number of links cut in the resistive element, and thus the final resistance thereof, depends on the particular positioning of the cut mask with respect to the die as determined by which of the alignment targets is aligned with the alignment key. For instance, aligning the alignment key with a first alignment target would result in cutting one link in the resistive element so as to achieve a first resistance value, while re-aligning the cut mask such that the alignment key aligns with another of the alignment targets would result in cutting two links in the resistive element so as to achieve a second resistance value. Since the trim of resistive elements may be adjusted to any one of many possible resistance values by simply changing the alignment of the cut mask with respect to the die, the need to have a separate cut mask for each of the possible trimmed resistance values is eliminated, thereby reducing costs.
Abstract:
An electrical circuit such as a Wheatstone bridge has a conductive strip extending between a current input terminal and a current output terminal and includes two resistors having a connecting part therebetween, a conductive segment extending between the connecting part and a measuring terminal, the connecting part being formed as a wider portion of the conductive strip in the direction of the conductive segment, the conductive segment having an adjusting portion between the connecting part and the measuring terminal.
Abstract:
A resistor network is provided which significantly reduces the total number of resistors required to achieve a given resolution. It comprises a cell of resistors that consists of a nonbinary number of resistors that is not evenly divisible by an integer power of two and is specifically selected to permit the group of resistors to be sequentially reduced to subgroups, or combinations, of resistors which yield a plurality of subgroup resistances that differ from preceding or subsequent subgroup resistances by a generally equivalent differential. The cell of resistors is combined with a plurality of resistor cells that consist of binary numbers of resistors in a conventional resistor ladder format. When combined with the binary resistor cells, the cell consisting of a nonbinary number of resistors provides a substantially similar resolution with a significant reduction in the number of resistors required. One embodiment of the present invention permits the resolution of a sixty-two resistor ladder to be simulated by a ladder that comprises only twenty-three resistors.
Abstract:
Conductive material is applied to a resistor to provide controlled shunting of current from localized regions of the resistor that would otherwise destructively fail during surge. Various embodiments are disclosed having varying resistance, dimension and placement. The continuity of the original resistor material is not altered, nor is the current diverted in such as way as to create a new localized regions that might destructively fail. The resistors so designed have application in lightning surge environments, power supply and power input circuitry and other applications where potential short duration surges might otherwise cause destructive failure of standard resistors.
Abstract:
A resistor network coupling two terminal leads and adapted to be fabricated on an integrated circuit. A plurality of N-sided meshes are each formed by N resistor elements linked at network nodes. Some of the resistor elements can be cut by a laser under computer control to select a desired resistance value of the network.
Abstract:
A precision resistor exhibiting a temperature coefficient of resistance which is very low and which is virtually independent of time, and capable of accepting high power, comprises a resistive foil applied to a substrate by means of an appropriate cement, wherein the coefficient of thermal expansion of the substrate is either at zero or as close to zero as is possible, and wherein the resistivity versus temperature characteristic of the foil selected is adjusted so as to compensate for the thermal strain induced change in resistance which results when the temperature of the assembly changes, and the device is reacting to the application of power virtually without creating a transient phenomenon due to the flow of heat. Also a method for producing such a precision resistor.
Abstract:
A resistance thermometer element having a thin layer of platinum metal on an insulating substrate is formed by magnetron sputtering in a gaseous atmosphere containing at least 10% by volume of oxygen. Any balance gas has less than 10% by volume of argon, krypton and xenon. The atmosphere may have up to 100% oxygen with any balance gas being inert to platinum. Air can be used. A planar magnetron may be used.