METHODS FOR LASER PROCESSING TRANSPARENT WORKPIECES USING PULSED LASER BEAM FOCAL LINES AND VAPOR ETCHING

    公开(公告)号:US20200254557A1

    公开(公告)日:2020-08-13

    申请号:US16776055

    申请日:2020-01-29

    Abstract: A method for processing a transparent workpiece includes directing a pulsed laser beam into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, thereby forming a damage line within the transparent workpiece, and the portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength λ, a spot size w0, and a Rayleigh range ZR that is greater than F D  π  w 0 2 λ , where FD is a dimensionless divergence factor comprising a value of 10 or greater. Further, the method for processing the transparent workpiece includes etching the transparent workpiece with an etching vapor to remove at least a portion of the transparent workpiece along the damage line, thereby forming an aperture extending through the at least a portion of the thickness of the transparent workpiece.

    TECHNIQUES FOR DICING BONDED WAFERS USING LASER TECHNOLOGIES

    公开(公告)号:US20240371693A1

    公开(公告)日:2024-11-07

    申请号:US18652102

    申请日:2024-05-01

    Abstract: Methods, systems, and devices implementing techniques for dicing bonded wafers using laser technologies are described. A bonded wafer includes an optically transmissive substrate bonded with a semiconductor substrate. The optically transmissive substrate is irradiated using a first laser technology associated with perforating the optically transmissive substrate to form damage tracks. The semiconductor substrate is irradiated using a second laser technology associated with forming damage regions within the semiconductor substrate. The damage regions of the semiconductor substrate are aligned with the damage tracks of the optically transmissive substrate during irradiation of the semiconductor substrate or the optically transmissive substrate, forming an aligned region through the bonded wafer with a relatively high likelihood for fracture. After irradiating the optically transmissive substrate and the semiconductor substrate, one or more forces may be applied to the bonded wafer to separate the bonded wafer into respective dies along the aligned region.

    SYSTEMS AND METHODS FOR FORMING PARTIAL NANO-PERFORATIONS WITH VARIABLE BESSEL BEAM

    公开(公告)号:US20220134475A1

    公开(公告)日:2022-05-05

    申请号:US17510615

    申请日:2021-10-26

    Abstract: Embodiments of the present disclosure include a optical assembly comprising: an axicon lens with spherical aberration configured to generate the laser beam focal line, an optical element set spaced part from the optical lens, and a focusing optical element spaced apart from the optical element set, wherein the axicon lens and the optical element set are translatable relative to each other along the laser beam propagation direction and wherein the focusing optical element is in a fixed position along the laser beam propagation direction.

    METHODS FOR DRILLING FEATURES IN A SUBSTRATE USING LASER PERFORATION AND LASER ABLATION

    公开(公告)号:US20240010544A1

    公开(公告)日:2024-01-11

    申请号:US18212504

    申请日:2023-06-21

    CPC classification number: C03B33/0222 B23K26/043 B23K2103/54

    Abstract: In one embodiment, a method of drilling a feature in a substrate includes directing a pulsed laser beam focal line into the substrate at a plurality of locations, the laser beam focal line generating an induced absorption within the substrate such that the laser beam focal line produces a perforation extending through a thickness of the substrate at the plurality of locations to form a perforation contour. The method further includes directing a focused ablation laser beam into the substrate and ablating at least a portion of the substrate along an ablation track that is offset from the perforation contour by a perforation-ablation offset ΔnP-Ablation to remove substrate material within a shape defined by the perforation contour to form the feature. The perforation-ablation offset ΔnP-Ablation is such that the feature has a chipping with chips having a size of less than 50 μm.

    SUBSTRATE CUTTING AND SEPARATING SYSTEMS AND METHODS

    公开(公告)号:US20220193831A1

    公开(公告)日:2022-06-23

    申请号:US17554357

    申请日:2021-12-17

    Abstract: A method of forming a plurality of defects within a substrate with a laser beam focal line using a laser beam, each defect of the plurality of defects being a damage track within the substrate with a diameter of about 10 microns or less, the plurality of defects forming a contour line on the substrate. The substrate having a first surface and a second surface that is opposite from the first surface. The method further includes exerting (i) a first force on the first surface of the substrate at a location that is adjacent to the contour line and (ii) a second force on the second surface of the substrate at a location that is on the contour line. Additionally, the method includes breaking the substrate along the contour line and into a first substrate portion and a second substrate portion.

    METHODS FOR LASER PROCESSING TRANSPARENT WORKPIECES USING PULSED LASER BEAM FOCAL LINES AND VAPOR ETCHING

    公开(公告)号:US20210283713A1

    公开(公告)日:2021-09-16

    申请号:US17327194

    申请日:2021-05-21

    Abstract: A method for processing a transparent workpiece includes directing a pulsed laser beam into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, thereby forming a damage line within the transparent workpiece, and the portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength λ, a spot size wo, and a Rayleigh range ZR that is greater than F D ⁢ π ⁢ w 0 , 2 λ , where FD is a dimensionless divergence factor comprising a value of 10 or greater. Further, the method for processing the transparent workpiece includes etching the transparent workpiece with an etching vapor to remove at least a portion of the transparent workpiece along the damage line, thereby forming an aperture extending through the at least a portion of the thickness of the transparent workpiece.

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