公开(公告)号：US20160155900A1

公开(公告)日：2016-06-02

申请号：US14776562

申请日：2014-03-14

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert Bono ,  Bernard Andre ,  Adrien Gasse

IPC: H01L33/32 ,  H01L33/64 ,  H01L33/08 ,  H01L33/46 ,  H01L33/50

CPC classification number: H01L33/32 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/52 ,  H01L33/54 ,  H01L33/641 ,  H01L33/642 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0075

Abstract: The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallisations.

Abstract translation: 本发明涉及一种制造发光二极管的方法，包括以下步骤：a）在SOI晶片（1,2,3）的硅层（1）上形成发光二极管（5），所述层位于 载体（2,3）; b）在发光二极管侧接合形成具有面向每个发光二极管的空隙的帽（7）的硅晶片; c）使硅晶片变薄以形成面对每个发光二极管的孔; d）用透明材料（21,23）填充每个孔; 以及e）至少部分去除SOI晶片（3）的载体并产生连接和散热金属化。