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公开(公告)号：US12027846B2
公开(公告)日：2024-07-02
申请号：US17790462
申请日：2022-03-23
发明人： Yingtao Zhang , Pan Mao , Junjie Liu , Lingxin Zhu , Bin Song , Qian Xu , Tieh-Chiang Wu
CPC分类号： H02H9/02 , H01L27/0255 , H01L27/0262 , H01L27/0266 , H01L27/0292
摘要： Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode. The electrostatic protection structure weakens the positive feedback of the parasitic transistor in the SCR device, improves the anti-latch capability of the device, realizes stronger protection capability, and enhances the reliability of the circuit.
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公开(公告)号：US12009357B2
公开(公告)日：2024-06-11
申请号：US17451173
申请日：2021-10-18
发明人： Pan Mao , Yingtao Zhang , Junjie Liu , Lingxin Zhu , Bin Song , Qian Xu , Tieh-Chiang Wu
IPC分类号： H01L27/02 , H01L29/747 , H01L29/87
CPC分类号： H01L27/0248 , H01L29/747 , H01L29/87
摘要： The present disclosure provides a diode-triggered bidirectional silicon controlled rectifier and circuit. The silicon controlled rectifier includes: a P-type substrate; a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well; a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well. The second N-type doped region is electrically connected with a positive electrode of a diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.
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公开(公告)号：US20230022588A1
公开(公告)日：2023-01-26
申请号：US17451173
申请日：2021-10-18
发明人： Pan MAO , Yingtao Zhang , Junjie Liu , Lingxin ZHU , Bin SONG , Qian XU , Tieh-Chiang WU
IPC分类号： H01L27/02 , H01L29/87 , H01L29/747
摘要： The present disclosure provides a diode-triggered bidirectional silicon controlled rectifier and circuit. The silicon controlled rectifier includes: a P-type substrate; a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well; a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well. The second N-type doped region is electrically connected with a positive electrode of a diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.
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公开(公告)号：US20240170952A1
公开(公告)日：2024-05-23
申请号：US17790462
申请日：2022-03-23
发明人： Yingtao Zhang , Pan Mao , Junjie Liu , Lingxin Zhu , Bin Song , Qian Xu , Tieh-Chiang Wu
CPC分类号： H02H9/02 , H01L27/0255 , H01L27/0262 , H01L27/0266 , H01L27/0292
摘要： Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode. The electrostatic protection structure weakens the positive feedback of the parasitic transistor in the SCR device, improves the anti-latch capability of the device, realizes stronger protection capability, and enhances the reliability of the circuit.
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公开(公告)号：US11936179B2
公开(公告)日：2024-03-19
申请号：US17810235
申请日：2022-06-30
发明人： Pan Mao , Yingtao Zhang , Junjie Liu , Lingxin Zhu , Bin Song , Qi'an Xu , Tieh-Chiang Wu
CPC分类号： H02H9/046 , H01L27/0255 , H01L27/0259 , H01L27/0288 , H01L27/0292
摘要： A discharge unit is connected to a power pad, a ground pad, and an I/O pad, and can discharge an electrostatic charge when an electrostatic pulse appears on any of the power pad, the ground pad, and the I/O pad. The discharge unit includes a first discharge unit and a second discharge unit, the first discharge unit is connected to the second discharge unit, the power pad, and the I/O pad, and the second discharge unit is connected to the ground pad and the I/O pad. The first discharge unit and/or the second discharge unit can discharge electrostatic charges on different pads, respectively.
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