公开(公告)号：US20180346338A1

公开(公告)日：2018-12-06

申请号：US15867913

申请日：2018-01-11

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Kilwon CHO ,  Min Seok YOO ,  Hyo Chan LEE

IPC: C01B32/186 ,  C23C16/26 ,  C23C14/34

Abstract: Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.