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公开(公告)号：US06201293B1
公开(公告)日：2001-03-13
申请号：US09196462
申请日：1998-11-19
IPC分类号： H01L23495
CPC分类号： H01L27/14601 , H01L27/14632 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface. A first primary color filter layer is deposited over at least first inner photosite and first outer photosite, and the first primary color filter layer transmits a primary color.
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2.发明授权Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same 有权具有减少滤光器薄膜边缘像素光电子的光学器件及其制造方法公开(公告)号：US06222180B1
公开(公告)日：2001-04-24
申请号：US09669124
申请日：2000-09-25
IPC分类号： G01J350
CPC分类号： H01L27/14632 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14687
摘要： The present invention relates to semiconductor devices with a reduced filter thinning of outer photosites and a method for reducing the thinning of filter layers of the outer photosites. A semiconductor device includes a main surface including a plurality of photosites and bonding pads defined in the main surface, wherein the photosites include inner photosites and outer photosites. The semiconductor device further includes a clear layer deposited over the main surface exclusive of the bonding pads and outer photosites, and a first primary color filter layer deposited over at least first inner photosite and first outer photosite, the first primary color filter transmitting a primary color.
摘要翻译： 本发明涉及具有减小的外部光斑的过滤器薄化的半导体器件以及用于减少外部光斑的滤光层的薄化的方法。 半导体器件包括主表面，该主表面包括限定在主表面中的多个光斑和接合焊盘，其中所述光斑包括内部光斑和外部光泽。 所述半导体器件还包括沉积在所述主表面上而不是所述接合焊盘和外部光泽的清晰层，以及沉积在至少第一内部光泽和第一外部光泽上的第一原色滤色器层，所述第一原色滤色器透过原色 。
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公开(公告)号：US06198093B1
公开(公告)日：2001-03-06
申请号：US09196394
申请日：1998-11-19
IPC分类号： G01J350
CPC分类号： H01L27/14632 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14687
摘要： The present invention relates to semiconductor devices with a reduced filter thinning of outer photosites and a method for reducing the thinning of filter layers of the outer photosites. A semiconductor device includes a main surface including a plurality of photosites and bonding pads defined in the main surface, wherein the photosites include inner photosites and outer photosites. The semiconductor device further includes a clear layer deposited over the main surface exclusive of the bonding pads and outer photosites, and a first primary color filter layer deposited over at least first inner photosite and first outer photosite, the first primary color filter transmitting a primary color.
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4.发明授权Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same 有权具有减少滤光器薄膜边缘像素光电子的光学器件及其制造方法公开(公告)号：US06255133B1
公开(公告)日：2001-07-03
申请号：US09641292
申请日：2000-08-18
IPC分类号： H01L21302
CPC分类号： H01L27/14601 , H01L27/14632 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface. A first primary color filter layer is deposited over at least first inner photosite and first outer photosite, and the first primary color filter layer transmits a primary color.
摘要翻译： 本发明涉及在边缘像素上具有减小的滤光器薄化的电光装置，以及用于减少最接近诸如感光芯片的光电装置的边缘的像素上的滤光层的薄化的方法， 例如，在全色数字复印机或扫描仪中。 半导体晶片包括限定由凹槽分开的多个芯片区域和突片区域的主表面，其中所述芯片区域包括内部光斑，外部光电子和键合焊盘。 在突片区域的主表面上沉积多个堤坝，并且在主表面之外沉积清晰层，而不包括粘合垫。 或者，在除了接合焊盘之外的主表面上沉积透明层，然后将多个突片沉积在主表面上的突片区域中。 第一原色滤色器层沉积在至少第一内部光泽和第一外部光泽上，并且第一原色滤色器层透过原色。
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公开(公告)号：US06998595B2
公开(公告)日：2006-02-14
申请号：US09802792
申请日：2001-03-08
IPC分类号： H01L27/00
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14623 , H01L27/14632 , H01L27/14685
摘要： An architecture and manufacturing method for photosensitive chips, such as used in office equipment and digital cameras, involves creating grooves between chip areas in a wafer, and then placing a light-transmissive planar layer over the main surface of the wafer. The planar layer, which may be acrylic-based, creates a substantially planar surface over both the photosites in the chip areas and the grooves. The planar layer in turn supports one or more light-transmissive filtering layers. The arrangement avoids damage to the filtering layers when the wafer is diced along the grooves.
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