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公开(公告)号:US20210119068A1
公开(公告)日:2021-04-22
申请号:US17071518
申请日:2020-10-15
发明人: Farida Selim
IPC分类号: H01L31/032 , H01L31/18
摘要: Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.
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公开(公告)号:US11923245B2
公开(公告)日:2024-03-05
申请号:US17795900
申请日:2021-02-03
发明人: Farida Selim
IPC分类号: H01L21/768 , H01L21/02 , H01L29/778
CPC分类号: H01L21/76886 , H01L21/02172 , H01L21/02241 , H01L21/02345 , H01L29/7783
摘要: Methods for inducing reversible or permanent conductivity in wide band gap metal oxides such as Ga2O3, using light without doping, as well as related compositions and devices, are described.
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公开(公告)号:US20240248042A1
公开(公告)日:2024-07-25
申请号:US18562531
申请日:2022-05-23
发明人: Farida Selim , Md Minhazul Islam
CPC分类号: G01N21/71 , G01J3/0286
摘要: A highly sensitive thermally stimulated emission (TSE) spectrometer, and a method of conducting spectrometry, are described. Provided is a thermally stimulated emission (TSE) spectrometer comprising a cryostat housing a sample stage in an area; a cooling source configured to lower a temperature of the area to as low as 9 K; a photo-excitation source configured to deliver electromagnetic radiation to a sample on the sample stage; a heat source configured to heat the area; a temperature control unit configured to control the cooling source and the heat source, so as to cool or heat the area; a monochromator configured to receive light emitted from the sample on the sample stage as the area is being heated by the heat source, and emit a specific wavelength or wavelengths of the light; a highly sensitive photomultiplier tube (PMT) configured to detect the light emitted from the monochromator at the specific wavelength or the light emitted directly from the sample covering all wavelengths.
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公开(公告)号:US20230377903A1
公开(公告)日:2023-11-23
申请号:US17616023
申请日:2020-04-09
发明人: Farida Selim
IPC分类号: H01L21/383 , H01L29/24 , H01L29/04
CPC分类号: H01L21/383 , H01L29/24 , H01L29/04
摘要: A method for bipolar doping of oxide semiconductor materials, a method for doping an oxide semiconductor material n-type, a method for doping an oxide semiconductor material p-type, and products of the same are described. Also described is p-type Ga2O3 having hydrogen atoms as dopants. Also described is n-type Ga2O3 having hydrogen atoms as dopants, or having both of a sheet carrier concentration of at least about 1016 cm2, and/or a mobility of at least about 100 cm2/VS at room temperature.
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公开(公告)号:US20230101586A1
公开(公告)日:2023-03-30
申请号:US17795900
申请日:2021-02-03
发明人: Farida Selim
IPC分类号: H01L21/768 , H01L21/02 , H01L29/778
摘要: Methods for inducing reversible or permanent conductivity in wide band gap metal oxides such as Ga2O3, using light without doping, as well as related compositions and devices, are described.
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