公开(公告)号：US11545563B2

公开(公告)日：2023-01-03

申请号：US17011648

申请日：2020-09-03

Applicant: The Board of Trustees of Western Michigan University

Inventor： Robert A. Makin, III ,  Steven Michael Durbin

IPC: H01L29/66 ,  H01L21/66

Abstract: A process of fabricating semiconductor devices includes determining a correlation between band gap and long range order parameter for one or more stoichiometries. Semiconductor materials having a preselected (target) band gap can be fabricated by controlling process parameters to form a material having a stoichiometry and long range order parameter having the target band gap.

公开(公告)号：US12113123B2

公开(公告)日：2024-10-08

申请号：US18070765

申请日：2022-11-29

Applicant: The Board of Trustees of Western Michigan University

Inventor： Robert A. Makin, III ,  Steven Michael Durbin

IPC: H01L29/66 ,  H01L21/66 ,  H10N60/01 ,  H10N60/12

CPC classification number: H01L29/66893 ,  H01L22/14 ,  H10N60/01 ,  H10N60/0912 ,  H10N60/12

Abstract: A method of fabricating a superconducting device includes determining a target transition temperature and utilizing a predefined quantitative relationship between superconducting transition temperature and an order parameter for at least one superconducting material composition is utilized to select a superconductor material composition that is capable of providing a target transition temperature. Process parameters may be controlled to form a superconductor device comprising at least one superconductor material having a material composition providing the target transition temperature.

公开(公告)号：US20230121423A1

公开(公告)日：2023-04-20

申请号：US18070765

申请日：2022-11-29

Applicant: The Board of Trustees of Western Michigan University

Inventor： Robert A. Makin, III ,  Steven Michael Durbin

IPC: H01L29/66 ,  H01L21/66

Abstract: A method of fabricating a superconducting device includes determining a target transition temperature and utilizing a predefined quantitative relationship between superconducting transition temperature and an order parameter for at least one superconducting material composition is utilized to select a superconductor material composition that is capable of providing a target transition temperature. Process parameters may be controlled to form a superconductor device comprising at least one superconductor material having a material composition providing the target transition temperature.

公开(公告)号：US20250006819A1

公开(公告)日：2025-01-02

申请号：US18829478

申请日：2024-09-10

Applicant: Board of Trustees of Western michigan University

Inventor： Robert A. Makin, III ,  Steven Michael Durbin

IPC: H01L29/66 ,  H01L21/66 ,  H10N60/01 ,  H10N60/12

Abstract: A method of fabricating a superconducting device includes determining a target transition temperature and utilizing a predefined quantitative relationship between superconducting transition temperature and an order parameter for at least one superconducting material composition is utilized to select a superconductor material composition that is capable of providing a target transition temperature. Process parameters may be controlled to form a superconductor device comprising at least one superconductor material having a material composition providing the target transition temperature.

公开(公告)号：US20210066478A1

公开(公告)日：2021-03-04

申请号：US17011648

申请日：2020-09-03

Applicant: The Board of Trustees of Western Michigan University

Inventor： Robert A. Makin, III ,  Steven Michael Durbin

IPC: H01L29/66 ,  H01L21/66

Abstract: A process of fabricating semiconductor devices includes determining a correlation between band gap and long range order parameter for one or more stoichiometries. Semiconductor materials having a preselected (target) band gap can be fabricated by controlling process parameters to form a material having a stoichiometry and long range order parameter having the target band gap.