Quantum dot pattern, quantum dot light-emitting device, display apparatus, and manufacturing method

    公开(公告)号:US12250861B2

    公开(公告)日:2025-03-11

    申请号:US17770487

    申请日:2021-04-20

    Inventor: Yong Wu

    Abstract: Embodiments of the present disclosure provide a quantum dot pattern, a quantum dot light-emitting device, a display apparatus and a manufacturing method. The method includes: forming grooves in one side of an original substrate; forming an isolation layer on the side, with the grooves, of the original substrate; forming quantum dot pattern portions in pattern pits; forming a sacrificial layer on sides, facing away from the isolation layer, of the quantum dot pattern portions; attaching an adhesive layer to a side, facing away from the quantum dot pattern portions, of the sacrificial layer; peeling off the adhesive layer to separate the quantum dot pattern portions and the sacrificial layer from the isolation layer together with the adhesive layer; and enabling a surface, exposing the quantum dot pattern portions, of the laminated structure to be in contact with a target substrate, and removing the sacrificial layer and the adhesive layer.

    Organic electroluminescent device and display apparatus

    公开(公告)号:US12295198B2

    公开(公告)日:2025-05-06

    申请号:US17635705

    申请日:2021-04-16

    Abstract: The embodiments of the disclosure provide an organic electroluminescent device, including an anode, a cathode, an emitting layer arranged between the anode and the cathode, and an assistant luminescent layer located on one side, facing the anode, of the emitting layer. The assistant luminescent layer includes a first host material and a first fluorescent guest material. The emitting layer includes a second host material, a TADF material, and a second fluorescent guest material. The first host material and the first fluorescent guest material satisfy: S1(B)−T1(B)>0.2 eV; S1(B)>S1(C); T1(B)>T1(C); ∥HOMO(B)−LUMO(C)|−S1(C)|≤0.2 eV. The lowest singlet state energy of the first host material is S1(B), and the lowest triplet state energy is T1(B). The lowest singlet state energy of the first fluorescent guest material is S1(C), and the lowest triplet state energy is T1(C).

    QUANTUM DOT PATTERN, QUANTUM DOT LIGHT-EMITTING DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD

    公开(公告)号:US20240147805A1

    公开(公告)日:2024-05-02

    申请号:US17770487

    申请日:2021-04-20

    Inventor: Yong Wu

    CPC classification number: H10K59/38 H10K59/1201

    Abstract: Embodiments of the present disclosure provide a quantum dot pattern, a quantum dot light-emitting device, a display apparatus and a manufacturing method. The method includes: forming grooves in one side of an original substrate; forming an isolation layer on the side, with the grooves, of the original substrate; forming quantum dot pattern portions in pattern pits; forming a sacrificial layer on sides, facing away from the isolation layer, of the quantum dot pattern portions; attaching an adhesive layer to a side, facing away from the quantum dot pattern portions, of the sacrificial layer; peeling off the adhesive layer to separate the quantum dot pattern portions and the sacrificial layer from the isolation layer together with the adhesive layer; and enabling a surface, exposing the quantum dot pattern portions, of the laminated structure to be in contact with a target substrate, and removing the sacrificial layer and the adhesive layer.

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