公开(公告)号：US20250120240A1

公开(公告)日：2025-04-10

申请号：US18729170

申请日：2023-01-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei LI ,  Mingxing WANG ,  Zhiqiang JIAO ,  Qian SUN ,  Huajie YAN ,  Yichi ZHANG

IPC: H10H29/85 ,  H10H20/01 ,  H10H20/812 ,  H10H20/825 ,  H10H29/01 ,  H10H29/852 ,  H10H29/855

Abstract: A chip structure includes a chip wafer unit and a color conversion substrate unit disposed on a light-exit side of the chip wafer unit. The chip wafer unit includes a light-emitting layer and an electrode layer sequentially stacked in a first direction. The light-emitting layer includes light-emitting portions. Each light-emitting portion includes at least two light-emitting sub-portions. The electrode layer includes a cathode, connection electrodes, and anodes in one-to-one correspondence with the light-emitting portions. The at least two light-emitting sub-portions are sequentially connected through at least one connection electrode. Among the at least two light-emitting sub-portions sequentially connected, a first one light-emitting sub-portion is a first selected light-emitting sub-portion, and a last one light-emitting sub-portion is a second selected light-emitting sub-portion. The first selected light-emitting sub-portion is connected to the cathode, and the second selected light-emitting sub-portion is connected to an anode.

公开(公告)号：US20240313036A1

公开(公告)日：2024-09-19

申请号：US18028452

申请日：2022-05-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Mingxing WANG ,  Wei LI ,  Huajie YAN ,  Qian SUN ,  Xue DONG ,  Guangcai YUAN ,  Qi QI ,  Xuan LIANG ,  Fei WANG

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: Provided in the disclosure are a light-emitting chip and a preparation method thereof, a light-emitting substrate, and a display device. The light-emitting chip includes: a silicon-based substrate including a plurality of sub-pixel openings; a plurality of light-emitting devices formed on one side of the silicon-based substrate; wherein the light-emitting devices are in one-to-one correspondence to the sub-pixel openings, and orthographic projections of the light-emitting devices on the silicon-based substrate overlap with the sub-pixel openings; and a plurality of photoluminescent color films located in at least part of the sub-pixel openings.

公开(公告)号：US20240347678A1

公开(公告)日：2024-10-17

申请号：US18579356

申请日：2022-08-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Huajie YAN ,  Qian SUN ,  Mingxing WANG ,  Wei LI ,  Zhiqiang JIAO ,  Qingyu HUANG ,  Mengna SUN

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0041 ,  H01L2933/0083

Abstract: The present disclosure provides a light-emitting device, a method for manufacturing a light-emitting device and a display apparatus, and belongs to the field of display technology, and can solve the problem that the light-emitting device in the related art has low luminescence efficiency. The light-emitting device of the present disclosure includes: a substrate, a light-emitting diode on the substrate and a color conversion layer on a side of the light-emitting diode away from the substrate; the light-emitting device further includes: nano-metal particles; a plurality of grooves are formed in a surface of the light-emitting diode away from the substrate; and the nano-metal particles are filled in the plurality of grooves.

公开(公告)号：US20220352000A1

公开(公告)日：2022-11-03

申请号：US17427628

申请日：2020-10-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu LI ,  Xiao ZHANG ,  Fei WANG ,  Mingxing WANG ,  Shulei LI ,  Xue DONG ,  Guangcai YUAN ,  Zhanfeng CAO ,  Xin GU ,  Ke WANG ,  Feng QU ,  Xuan LIANG ,  Junwei YAN

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

Abstract: A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

公开(公告)号：US20220131044A1

公开(公告)日：2022-04-28

申请号：US17407919

申请日：2021-08-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Haixu LI ,  Mingxing WANG ,  Guangcai YUAN ,  Zhanfeng CAO ,  Ke WANG ,  Feng QU

IPC: H01L33/38 ,  H01L27/15 ,  H01L25/075 ,  H01L33/62

Abstract: A driving backplane, a display panel and a display apparatus are provided. The driving backplane includes: a base substrate, and a plurality of connection electrode groups and a plurality of correction structures disposed on the base substrate, each of the connection electrode groups includes: a first connection electrode and a second connection electrode the first connection electrode and the second connection electrode are arranged on a same layer; a first gap is formed between the first connection electrode and the second connection electrode, and a first group of opposite edges includes: an edge, close to the first gap, of the first connection electrode; and an edge, close to the first gap, of the second connection electrode; a second group of opposite edges includes: an edge, far away from the first gap, of the first connection electrode; and an edge, far away from the first gap, of the second connection electrode.

公开(公告)号：US20240421275A1

公开(公告)日：2024-12-19

申请号：US18701618

申请日：2023-04-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Can WANG ,  Yan QU ,  Minghua XUAN ,  Mingxing WANG ,  Xuan LIANG ,  Fei WANG ,  Xue DONG ,  Qi QI ,  Mingkun YANG

IPC: H01L33/62 ,  H01L25/16 ,  H01L33/00 ,  H01L33/32

Abstract: A display substrate includes a driving backplane, and a light-emitting device layer located on a side of the driving backplane. The light-emitting device layer includes a plurality of light-emitting units; a plurality of transparent electrodes which are located on surfaces of the plurality of light-emitting units away from the driving backplane and electrically connected to the light-emitting units; and a first bonding pattern which is at least located between the plurality of transparent electrodes. The first bonding pattern is electrically connected to at least one transparent electrode.

公开(公告)号：US20220376137A1

公开(公告)日：2022-11-24

申请号：US17435016

申请日：2020-11-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Mingxing WANG ,  Binbin TONG ,  Lizhen ZHANG ,  Chenyang ZHANG ,  Zhen ZHANG ,  Xiawei YUN ,  Guangcai YUAN ,  Xue DONG ,  Muxin DI ,  Zhiwei LIANG ,  Ke WANG ,  Zhanfeng CAO

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075

Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

公开(公告)号：US20220238594A1

公开(公告)日：2022-07-28

申请号：US17488243

申请日：2021-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xue DONG ,  Guangcai YUAN ,  Qi YAO ,  Zhanfeng CAO ,  Shi SHU ,  Mingxing WANG ,  Xiang LI

IPC: H01L27/15 ,  H01L25/065 ,  H01L25/00

Abstract: A LED chip, including: substrate; LEDs on side of the substrate, each including first semiconductor pattern, light emission pattern, second semiconductor pattern sequentially stacked, the first semiconductor patterns of at least two LEDs being formed as single piece to constitute first semiconductor layer; at least one first electrode on side of first semiconductor layer away from the substrate and electrically coupled to first semiconductor layer; second electrodes on side of the second semiconductor patterns away from the substrate, each being electrically coupled to second semiconductor pattern of corresponding LED; pixel defining layer on side of the substrate away from LED, and having pixel openings in one-to-one correspondence with LEDs; and a color conversion pattern within at least two pixel openings, and converting light of first color emitted by the light emission pattern into light of target color other than the first color. The LED chip is Mini-LED or Micro-LED chip.

公开(公告)号：US20250006873A1

公开(公告)日：2025-01-02

申请号：US18260656

申请日：2022-06-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei LI ,  Mingxing WANG ,  Xiao ZHANG ,  Minghua XUAN ,  Can ZHANG ,  Can WANG ,  Dongliang ZHANG ,  Qian JIN ,  Xiang LI ,  Jingjing ZHANG ,  Jinfei NIU

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/32 ,  H01L33/62

Abstract: A chip structure is provided. The chip structure includes: a chip wafer unit and a color conversion layer unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting function layers. The color conversion layer unit includes color conversion layers arranged on the light-exit side of the chip wafer unit. The chip structure further includes: an attaching layer, arranged between the chip wafer unit and the color conversion layer unit and configured to attach the chip wafer unit and the color conversion layer unit.

公开(公告)号：US20240413274A1

公开(公告)日：2024-12-12

申请号：US18261680

申请日：2022-05-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei LI ,  Mingxing WANG ,  Qian SUN ,  Huajie YAN ,  Zhiqiang JIAO ,  Xuan LIANG ,  Qian JIN ,  Xiang LI ,  Can WANG ,  Minghua XUAN ,  Can ZHANG

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/56

Abstract: A chip structure is provided. The chip structure includes a chip wafer unit and a color conversion layer substrate unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting functional layers. The color conversion layer substrate unit includes a color conversion layer arranged on the light-exit side of the chip wafer unit. The chip wafer unit further includes a first bonding layer, arranged between the sub-pixel light-emitting functional layers and the color conversion layer, and configured to bond the chip wafer unit and the color conversion layer substrate unit.