Bottom electrode via structures for micromachined ultrasonic transducer devices

    公开(公告)号:US12269061B2

    公开(公告)日:2025-04-08

    申请号:US18376598

    申请日:2023-10-04

    Abstract: An ultrasound transducer device includes an electrode, a membrane separated from the electrode by a cavity between the membrane and the electrode, a patterned membrane support layer that defines a size and shape of the cavity and that is disposed between the electrode and the membrane, and vias that electrically connect the electrode to a substrate. The vias are disposed in the ultrasound transducer device such that less than 50% of the vias overlap with a support surface of the patterned membrane support layer, in a plan view.

    Anti-stiction bottom cavity surface for micromachined ultrasonic transducer devices

    公开(公告)号:US12263506B2

    公开(公告)日:2025-04-01

    申请号:US18530629

    申请日:2023-12-06

    Abstract: An ultrasound transducer device made by a process that includes the steps of forming depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.

    ADAPTIVE CAVITY THICKNESS CONTROL FOR MICROMACHINED ULTRASONIC TRANSDUCER DEVICES

    公开(公告)号:US20240416385A1

    公开(公告)日:2024-12-19

    申请号:US18813377

    申请日:2024-08-23

    Abstract: A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.

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