公开(公告)号：US3882000A

公开(公告)日：1975-05-06

申请号：US46842374

申请日：1974-05-09

Applicant: BELL TELEPHONE LABOR INC

Inventor： SCHWARTZ BERTRAM ,  SPITZER STUART MARSHALL ,  WEIGLE GREGORY DYETT

IPC: C25D11/32 ,  H01L21/316 ,  C23F17/00 ,  H01L7/18

CPC classification number: C25D11/32 ,  H01L21/31687

Abstract: A method of forming a composite oxide on III-V compound semiconductors is disclosed. An oxidizable metal such as Al, Ni, Ta, Ti, Zn or alloys including said metals is deposited on the surface of the semiconductor or on a native oxide grown on the semiconductor. The structure is subjected to an electrolytic oxidation so that all the metal is oxidized and a native oxide is grown into the surface resulting in a composite oxide comprising the native oxide and the metal oxide. This composite oxide can serve to passivate the semiconductor as well as provide a stable mask for etching and diffusion processes. In addition, the composite oxide appears to have a high dielectric strength for use in MOS devices.

Abstract translation: 公开了在III-V族化合物半导体上形成复合氧化物的方法。 可氧化金属如Al，Ni，Ta，Ti，Zn或包含所述金属的合金沉积在半导体的表面上或在半导体上生长的天然氧化物上。 对该结构进行电解氧化，使得所有的金属被氧化，并且将天然氧化物生长到表面中，产生包含天然氧化物和金属氧化物的复合氧化物。 该复合氧化物可用于钝化半导体，并为蚀刻和扩散工艺提供稳定的掩模。 此外，复合氧化物似乎具有用于MOS器件的高介电强度。

公开(公告)号：US3894919A

公开(公告)日：1975-07-15

申请号：US46842474

申请日：1974-05-09

Applicant: BELL TELEPHONE LABOR INC

Inventor： SCHWARTZ BERTRAM ,  SPITZER STUART MARSHALL ,  WEIGLE GREGORY DYETT

IPC: H01L21/316 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  C25D11/00 ,  C25D5/02

CPC classification number: H01L33/44 ,  H01L21/31687 ,  H01L33/30 ,  H01L33/387 ,  H01L33/40

Abstract: A method is described which permits electrolytic oxidation of semiconductor samples with contact metallization in place. An anodizable metal such as Al, Ni, Ta, Ti, Zn or alloys including such metal is deposited over the contacts. During electrolytic oxidation, the oxide formed over the metal closes off shunting paths which would normally exist through the contacts and thereby permits a native oxide to grow into the exposed surface of the semiconductor. The oxide formed over the metal can be easily cracked under mechanical pressure to permit electrical connection to the contacts in the final device.

Abstract translation: 描述了允许在接触金属化就位的半导体样品的电解氧化的方法。 诸如Al，Ni，Ta，Ti，Zn的阳极化金属或包括这种金属的合金沉积在触点上。 在电解氧化期间，形成在金属上的氧化物封闭通常通过触点存在的分流路径，从而允许天然氧化物生长到半导体的暴露表面。 形成在金属上的氧化物可以在机械压力下容易地破裂，以允许电连接到最终装置中的触点。

公开(公告)号：US3890169A

公开(公告)日：1975-06-17

申请号：US34470273

申请日：1973-03-26

Applicant: BELL TELEPHONE LABOR INC

Inventor： SCHWARTZ BERTRAM ,  SPITZER STUART MARSHALL ,  WEIGLE GREGORY DYETT

IPC: H01L21/324 ,  H01L21/316

CPC classification number: H01L21/31654 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S252/951

Abstract: A method of forming a highly stable oxide on gallium arsenide containing compound semiconductors. A native oxide is grown on the surface of the semiconductor and dried during a suitable baking cycle. The oxide is then annealed at a temperature which is significantly higher than that of the baking cycle. This annealing step densifies the oxide and renders it particularly stable and impervious to impurities. In a particular embodiment, a diffusion mask is formed in accordance with the invention to permit selective area diffusion of impurities into a gallium arsenide containing compound semiconductor.

Abstract translation: 在含有砷化镓的化合物半导体上形成高度稳定的氧化物的方法。 在半导体的表面上生长天然氧化物，并在合适的烘烤循环期间干燥。 然后将氧化物在显着高于烘烤循环的温度下退火。 该退火步骤使氧化物致密化并使其特别稳定并且不渗透杂质。 在特定实施例中，根据本发明形成扩散掩模，以允许杂质选择性区域扩散到含砷化镓的化合物半导体中。