公开(公告)号：US20180346501A1

公开(公告)日：2018-12-06

申请号：US15779893

申请日：2016-11-30

申请人： BASF SE ,  GEORG-AUGUST-UNIVERSITÄT GÖTTINGEN

发明人： Torben ADERMANN ,  Daniel LOEFFLER ,  Hagen WILMER ,  Kerstin SCHIERLE-ARNDT ,  Jan GERKENS ,  Christian VOLKMANN ,  Sven SCHNEIDER

IPC分类号： C07F15/06 ,  C09D1/00 ,  C09D5/02 ,  C01B33/06 ,  C23C16/18 ,  C23C16/455

摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R 1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

公开(公告)号：US20190177844A1

公开(公告)日：2019-06-13

申请号：US16322999

申请日：2017-08-23

申请人： BASF SE

发明人： Torben ADERMANN ,  Falko ABELS ,  Carolin LIMBURG ,  Hagen WILMER ,  Jan GERKENS ,  Sven SCHNEIDER

IPC分类号： C23C16/455 ,  C23C16/18 ,  C07F15/06

摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.