公开(公告)号：US20230238287A1

公开(公告)日：2023-07-27

申请号：US17584669

申请日：2022-01-26

Applicant: Applied Materials, Inc. ,  NATIONAL UNIVERSITY OF SINGAPORE

Inventor： Prayudi LIANTO ,  Guan Huei SEE ,  Arvind SUNDARRAJAN ,  Muhammad Avicenna NARADIPA ,  Andrivo RUSYDI

IPC: H01L21/66 ,  H01L23/00

CPC classification number: H01L22/12 ,  H01L24/80 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Methods and apparatus for processing a first substrate and a second substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate, which is different than the first substrate, determining in-situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate, measuring a change of phase and amplitude in determined in-situ ESE data, and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from the measured change of phase and amplitude in the in-situ ESE data.

公开(公告)号：US20220258304A1

公开(公告)日：2022-08-18

申请号：US17176839

申请日：2021-02-16

Applicant: Applied Materials, Inc. ,  NATIONAL UNIVERSITY OF SINGAPORE

Inventor： Prayudi LIANTO ,  Guan Huei SEE ,  Arvind SUNDARRAJAN ,  Andrivo RUSYDI ,  Muhammad Avicenna NARADIPA

IPC: B24B57/02 ,  G01N21/21

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a surface of a substrate for determining in-situ ESE data therefrom during substrate processing, measuring a change of phase and amplitude in determined in-situ ESE data, and determining various aspects of the surface of the substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from a measured change of phase and amplitude in the in-situ ESE data.

公开(公告)号：US20240011184A1

公开(公告)日：2024-01-11

申请号：US18042007

申请日：2021-08-17

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： Andrivo RUSYDI ,  Eng Soon TOK ,  Bin Leong Edwin ONG

IPC: C30B23/00 ,  C30B23/06 ,  C30B29/02

CPC classification number: C30B23/002 ,  C30B23/063 ,  C30B23/066 ,  C30B29/02

Abstract: A method of fabricating low dimensional nanostructures on a growth substrate, a single-crystalline low dimensional nanostructure, and a device comprising one or more single-crystalline low dimensional nanostructures. The method comprises fabricating low dimensional nanostructures on a growth substrate using physical vapor deposition, PVD, in a vacuum chamber wherein the low dimensional nanostructures are formed as a strain relief mechanism promoted by a similarity of crystal structure 2-dimensional symmetry between the growth substrate and the low dimensional nanostructures to be grown and a lattice mismatch between the growth substrate and the low dimensional nanostructures to be grown.