公开(公告)号：US20250035680A1

公开(公告)日：2025-01-30

申请号：US18226554

申请日：2023-07-26

Applicant: Applied Materials, Inc.

Inventor： Suketu Parikh ,  Jimmy Iskandar ,  Tsz Keung Cheung ,  Chih Wei Lin ,  Michael D. Armacost

IPC: G01R19/12 ,  H01L21/66

Abstract: An electronic device manufacturing system configured to obtain current sensor data associated with a sensor of a substrate manufacturing system and determine a slope value associated with the current sensor data. Responsive to determining that the slope value satisfied a threshold criterion associated with a fault detection limit, at least one of an alert is generated or a corrective action performed.

公开(公告)号：US10892198B2

公开(公告)日：2021-01-12

申请号：US16131942

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Chirantha P. Rodrigo ,  Suketu A. Parikh ,  Tsz Keung Cheung ,  Satya Gowthami Achanta ,  Jingchun Zhang ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01L21/768 ,  H01L21/66 ,  H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

公开(公告)号：US20200091018A1

公开(公告)日：2020-03-19

申请号：US16131942

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Chirantha P. Rodrigo ,  Suketu A. Parikh ,  Tsz Keung Cheung ,  Satya Gowthami Achanta ,  Jingchun Zhang ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01L21/66 ,  H01L21/3065 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.