公开(公告)号：US09721784B2

公开(公告)日：2017-08-01

申请号：US14770412

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. Behera ,  Shahid Shaikh ,  Pramit Manna ,  Mandar B. Pandit ,  Tersem Summan ,  Patrick Reilly ,  Deenesh Padhi ,  Bok Hoen Kim ,  Heung Lak Park ,  Derek R. Witty

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/26 ,  C23C16/50

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source:plasma-initiating gas:dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

公开(公告)号：US10074534B2

公开(公告)日：2018-09-11

申请号：US15636239

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. Behera ,  Shahid Shaikh ,  Pramit Manna ,  Mandar B. Pandit ,  Tersem Summan ,  Patrick Reilly ,  Deenesh Padhi ,  Bok Hoen Kim ,  Heung Lak Park ,  Derek R. Witty

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/26 ,  C23C16/50

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.