公开(公告)号：US20160083840A1

公开(公告)日：2016-03-24

申请号：US14863063

申请日：2015-09-23

Applicant: Applied Materials, Inc.

Inventor： PREETHAM RAO ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4583 ,  C23C16/4581 ,  H01L21/67098 ,  H01L21/68785

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract translation: 本文描述的实施例包括用于半导体处理的基座，其包括可以具有至少1mm的厚度的取向石墨板。 基座可以具有支撑构件，并且取向的石墨板可以设置在支撑构件上。 支撑构件可以具有中心热导管和边缘热导管，并且可以在中心热导管和边缘热导管之间基本上是固体的。

公开(公告)号：US11021794B2

公开(公告)日：2021-06-01

申请号：US16011383

申请日：2018-06-18

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: H05B3/68 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

公开(公告)号：US10000847B2

公开(公告)日：2018-06-19

申请号：US14863063

申请日：2015-09-23

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: H05B3/68 ,  C23C16/00 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

CPC classification number: C23C16/4583 ,  C23C16/4581 ,  H01L21/67098 ,  H01L21/68785

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

公开(公告)号：US20150087082A1

公开(公告)日：2015-03-26

申请号：US14035927

申请日：2013-09-24

Applicant: Applied Materials, Inc.

Inventor： Subramani Iyer

IPC: H01L21/66 ,  B23K26/00 ,  H01L21/324

CPC classification number: H01L23/345 ,  B23K26/0006 ,  B23K26/352 ,  B23K26/3576 ,  B23K2103/56 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In some embodiments, a system includes (1) a controller configured to receive information regarding substrate uniformity; (2) a processing tool configured to perform a semiconductor device manufacturing process on a substrate; and (3) a laser delivery mechanism coupled to the controller, the laser delivery mechanism configured to selectively deliver laser energy to the substrate during processing within the processing tool so as to selectively heat the substrate during processing. The controller is configured to employ the substrate uniformity information to determine a temperature profile to apply to the substrate during processing within the processing tool and to employ the laser delivery mechanism to selectively heat the substrate during processing within the processing tool based on the temperature profile. Numerous other embodiments are provided.

Abstract translation: 在一些实施例中，系统包括（1）被配置为接收关于衬底均匀性的信息的控制器; （2）配置为在基板上执行半导体器件制造工艺的处理工具; 和（3）耦合到所述控制器的激光输送机构，所述激光输送机构配置成在所述加工工具内的加工过程中选择性地将激光能量递送到所述基板，以便在加工期间选择性地加热所述基板。 控制器被配置为采用衬底均匀性信息来确定在处理工具内的处理期间施加到衬底的温度分布，并且使用激光输送机构基于温度曲线在处理工具内的处理期间选择性地加热衬底。 提供了许多其他实施例。