公开(公告)号：US20250157790A1

公开(公告)日：2025-05-15

申请号：US18926504

申请日：2024-10-25

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Sang-Heum KIM ,  Joung Joo LEE

IPC: H01J37/32 ,  C23C14/34 ,  C23C14/35

Abstract: Embodiments described herein provide an apparatus and method for fabricating semiconductor devices with improved process control and performance. The apparatus includes a processing chamber with first and second RF coil assemblies generating primary and secondary plasmas in distinct regions, along with first and second electromagnet assemblies for independent magnetic field control. A removable biasable flux optimizer is disposed in the apparatus to modulate plasma distribution and directionality. The method involves a three-step sequence comprising Inductive coupled plasma (IMP) low energy deposition, deposition for enhanced step coverage, and etching for overhang removal. The ICP deposition utilizes primary and secondary plasmas generated by the RF coil assemblies, with intensified collisions achieved through chamber pressure increase. Additionally, a simultaneous deposition and etching process can be employed, with optional additional etching steps for improved overhang removal.