公开(公告)号：US20230275165A1

公开(公告)日：2023-08-31

申请号：US18133602

申请日：2023-04-12

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/0392 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/03928 ,  H01L31/0749 ,  H01L31/18

Abstract: A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O.

公开(公告)号：US12211947B2

公开(公告)日：2025-01-28

申请号：US18133602

申请日：2023-04-12

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/0392 ,  H01L31/0749 ,  H01L31/18

Abstract: A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O.

公开(公告)号：US20210111297A1

公开(公告)日：2021-04-15

申请号：US16653750

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/032

Abstract: Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.

公开(公告)号：US11728449B2

公开(公告)日：2023-08-15

申请号：US16702107

申请日：2019-12-03

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/0392 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/03928 ,  H01L31/0749 ,  H01L31/18

Abstract: Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

公开(公告)号：US20210167235A1

公开(公告)日：2021-06-03

申请号：US16702107

申请日：2019-12-03

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0749

Abstract: Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

公开(公告)号：US11018275B2

公开(公告)日：2021-05-25

申请号：US16653750

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/109 ,  H01L31/032 ,  H01L31/18

Abstract: Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.

公开(公告)号：US20210111222A1

公开(公告)日：2021-04-15

申请号：US16653762

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Toshihiko Miyashita ,  Ellie Yieh ,  Srinivas D. Nemani ,  Seshadri Ramaswami ,  Nikolaos Bekiaris

IPC: H01L27/146

Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.