公开(公告)号：US09646818B2

公开(公告)日：2017-05-09

申请号：US15077545

申请日：2016-03-22

Applicant: Applied Materials, Inc.

Inventor： Patrick James Reilly ,  David Alan Bethke ,  Kwangduk Lee

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/02115 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31133

Abstract: Aspects of the disclosure pertain to methods of forming planar amorphous carbon layers on patterned substrates. Layers formed according to embodiments outlined herein have may improve manufacturing yield by making the top surface of an amorphous carbon layer more planar despite underlying topography or stoichiometric variations. The amorphous carbon layers may comprise carbon and hydrogen, may consist of carbon and hydrogen or may comprise or consist of carbon, hydrogen and nitrogen in embodiments. Methods described herein may comprise introducing a hydrogen-containing precursor at a relatively high ratio relative to a hydrocarbon into a substrate processing region and concurrently applying a local plasma power capacitively to the substrate processing region to form the planar layer. Alternatively an atomic flow ratio of hydrogen:carbon may begin low and increase discretely or smoothly during formation of the amorphous carbon layer.

公开(公告)号：US20160284538A1

公开(公告)日：2016-09-29

申请号：US15077545

申请日：2016-03-22

Applicant: Applied Materials, Inc.

Inventor： Patrick James Reilly ,  David Alan Bethke ,  Kwangduk Lee

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02115 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31133

Abstract: Aspects of the disclosure pertain to methods of forming planar amorphous carbon layers on patterned substrates. Layers formed according to embodiments outlined herein have may improve manufacturing yield by making the top surface of an amorphous carbon layer more planar despite underlying topography or stoichiometric variations. The amorphous carbon layers may comprise carbon and hydrogen, may consist of carbon and hydrogen or may comprise or consist of carbon, hydrogen and nitrogen in embodiments. Methods described herein may comprise introducing a hydrogen-containing precursor at a relatively high ratio relative to a hydrocarbon into a substrate processing region and concurrently applying a local plasma power capacitively to the substrate processing region to form the planar layer. Alternatively an atomic flow ratio of hydrogen:carbon may begin low and increase discretely or smoothly during formation of the amorphous carbon layer.

Abstract translation: 本公开的方面涉及在图案化基板上形成平面非晶碳层的方法。 根据本文概述的实施方案形成的层可以通过使无定形碳层的顶表面更平面，而不管底层的地形或化学计量变化，都可以提高制造产率。 无定形碳层可以包括碳和氢，可以由碳和氢组成，或者在实施方案中可以包含或由碳，氢和氮组成。 本文描述的方法可以包括将相对于烃的相对高的比例的含氢前体引入基板处理区域中，同时将局部等离子体功率电容地施加到基板处理区域以形成平面层。 或者，氢：碳的原子流动比可以开始低，并且在形成无定形碳层期间离散或平滑地增加。

公开(公告)号：US09748093B2

公开(公告)日：2017-08-29

申请号：US15071523

申请日：2016-03-16

Applicant: Applied Materials, Inc.

Inventor： Patrick James Reilly ,  David Alan Bethke ,  Mihaela Balseanu

IPC: H01L21/56 ,  H01L21/02 ,  H01L23/31

CPC classification number: H01L21/02315 ,  H01L21/0217 ,  H01L21/02274 ,  H01L23/3171

Abstract: Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed according to embodiments outlined herein have been found to inhibit diffusion and electrical leakage across the conformal liners. The liners may comprise nitrogen and be described as nitride layers according to embodiments. The conformal liners may comprise silicon and nitrogen and may consist of silicon and nitrogen in embodiments. Methods described herein may comprise introducing a silicon-containing precursor and a nitrogen-containing precursor into a substrate processing region and concurrently applying a pulsed plasma power capacitively to the substrate processing region to form the conformal layer.

公开(公告)号：US20160284567A1

公开(公告)日：2016-09-29

申请号：US15071523

申请日：2016-03-16

Applicant: Applied Materials, Inc.

Inventor： Patrick James Reilly ,  David Alan Bethke ,  Mihaela Balseanu

IPC: H01L21/56 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L21/02315 ,  H01L21/0217 ,  H01L21/02274 ,  H01L23/3171

Abstract: Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed according to embodiments outlined herein have been found to inhibit diffusion and electrical leakage across the conformal liners. The liners may comprise nitrogen and be described as nitride layers according to embodiments. The conformal liners may comprise silicon and nitrogen and may consist of silicon and nitrogen in embodiments. Methods described herein may comprise introducing a silicon-containing precursor and a nitrogen-containing precursor into a substrate processing region and concurrently applying a pulsed plasma power capacitively to the substrate processing region to form the conformal layer.

Abstract translation: 本公开的方面涉及在具有高高宽比宽度间隙的图案化衬底上形成保形衬垫的方法。 已经发现根据本文概述的实施方案形成的层抑制跨越保形衬垫的扩散和漏电。 衬垫可以包括氮，并且根据实施例被描述为氮化物层。 保形衬里可以包括硅和氮，并且在实施例中可以由硅和氮组成。 本文描述的方法可以包括将含硅前体和含氮前体引入基底处理区域并且同时将脉冲等离子体功率电容地施加到基底处理区域以形成共形层。