公开(公告)号：US20200312640A1

公开(公告)日：2020-10-01

申请号：US16902194

申请日：2020-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan RITCHIE ,  John C. FORSTER ,  Muhammad RASHEED

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US20180010242A1

公开(公告)日：2018-01-11

申请号：US15632921

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Muhammad RASHEED ,  Keith A. MILLER ,  Rongjun WANG

IPC: C23C14/50 ,  C23C16/458 ,  C23C14/56 ,  H01L21/687 ,  C23C14/34

CPC classification number: C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

公开(公告)号：US20240186128A1

公开(公告)日：2024-06-06

申请号：US18418930

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Alan RITCHIE ,  John C. FORSTER ,  Muhammad RASHEED

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32504 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US20160340775A1

公开(公告)日：2016-11-24

申请号：US15216389

申请日：2016-07-21

Applicant: Applied Materials, Inc.

Inventor： Muhammad RASHEED ,  Keith A. MILLER ,  Rongjun WANG

IPC: C23C14/50 ,  C23C14/34

CPC classification number: C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.