公开(公告)号：US20250051902A1

公开(公告)日：2025-02-13

申请号：US18232631

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Bencherki Mebarki ,  Jiecong Tang ,  Mohammed Mahdi Tavakoli ,  John Sudijono ,  Joung Joo Lee

IPC: C23C12/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.